MRF7S21150HR3 Freescale Semiconductor, MRF7S21150HR3 Datasheet - Page 8

• Manufacturer Part Number: MRF7S21150HR3
• Description: MOSFET RF N-CH 44W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21150HR3

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.35A
• Voltage - Test: 28V
• Power - Output: 44W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 44W
• Power Gain (typ)@vds: 17.5dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 320@28VpF
• Output Capacitance (typ)@vds: 590@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 31%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S21150HR3 MRF7S21150HSR3
8
18
17
16
15
14
0.0001
0.001
0.01
0
100
0.1
10
1
Figure 12. Power Gain versus Output Power
Figure 14. CCDF W - CDMA IQ Magnitude Clipping,
0
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
P
out
2
, OUTPUT POWER (WATTS) CW
Single - Carrier Test Signal
100
PEAK−TO−AVERAGE (dB)
V
DD
= 24 V
4
28 V
200
6
I
f = 2140 MHz
DQ
Input Signal
TYPICAL CHARACTERISTICS
32 V
= 1350 mA
W - CDMA TEST SIGNAL
8
300
10
−100
−110
10
10
10
10
−10
−20
−30
−40
−50
−60
−70
−80
−90
8
7
6
5
90
−9
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
Figure 15. Single - Carrier W - CDMA Spectrum
−7.2
110
−ACPR in 3.84 MHz
Integrated BW
−5.4
130
T
J
DD
, JUNCTION TEMPERATURE ( C)
−3.6
= 28 Vdc, P
f, FREQUENCY (MHz)
150
−1.8
Channel BW
3.84 MHz
out
170
= 44 W Avg., and
0
Freescale Semiconductor
1.8
190
−ACPR in 3.84 MHz
Integrated BW
3.6
210
RF Device Data
D
5.4
= 31%.
230
7.2
250
9