MD7P19130HR5 Freescale Semiconductor, MD7P19130HR5 Datasheet

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MD7P19130HR5

Manufacturer Part Number
MD7P19130HR5
Description
MOSFET N-CH RF 28V 40W NI780H-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MD7P19130HR5

Transistor Type
N-Channel
Frequency
1.93GHz ~ 1.99GHz
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.25A
Voltage - Test
28V
Power - Output
130W
Package / Case
NI-780H-4
Product
Driver ICs - Various
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MD7P19130HR5
Manufacturer:
HITTITE
Quantity:
1 400
Part Number:
MD7P19130HR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for CDMA base station applications with frequencies from 1930 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Output Power
Operation
DQ
out
Power Gain — 20 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --36 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
= 1250 mA, P
@ 1 dB Compression Point ≃ 130 Watts CW
out
= 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude
(1,2)
Rating
DD
= 28 Volts,
Symbol
V
V
V
T
T
DSS
T
GS
DD
stg
RF
C
RF
J
CASE 465M- -01, STYLE 1
CASE 465H- -02, STYLE 1
Document Number: MD7P19130H
1930- -1990 MHz, 40 W AVG., 28 V
inA
inB
MD7P19130HSR3
MD7P19130HSR3
/V
/V
MD7P19130HR3
MD7P19130HR3 MD7P19130HSR3
MD7P19130HR3
Figure 1. Pin Connections
GSA
GSB
LATERAL N- -CHANNEL
NI- -780S- -4
RF POWER MOSFETs
NI- -780- -4
SINGLE W- -CDMA
3
4
-- 65 to +150
--0.5, +65
--6.0, +10
(Top View)
32, +0
Value
150
225
Rev. 2, 8/2010
1
2 RF
RF
outA
outB
Unit
Vdc
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

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MD7P19130HR5 Summary of contents

Page 1

... Operating Junction Temperature 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MD7P19130H MD7P19130HSR3 ...

Page 2

... Vdc 1.9 2.7 3.4 Vdc 0.1 0.2 0.3 Vdc — 1.2 — pF — 586 — pF — 348 — Avg 1987.5 MHz, out 18 — % 5.6 6 — dB — --36 --32.5 dBc — --16 --7 dB (continued) RF Device Data Freescale Semiconductor ...

Page 3

... W CW 1960 MHz out Part--to--Part Insertion Phase Variation @ 1960 MHz, Six Sigma Window Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) A Symbol = 28 Vdc P1dB = 40 W Avg. ...

Page 4

... T491C226K035AT 477KXM063M GRM55DR61H106KA88B CRCW120610R0FKEA V SUPPLY + + C8 C11 C12 C10 Z17 Z18 Z20 Z21 Z22 Z23 Z24 Z25 Z26 C9 = 2.55 r Part Number Manufacturer Fair--Rite Illinois Cap. Kemet ATC Kemet ATC ATC ATC Kemet Illinois Cap. Murata Vishay RF Device Data Freescale Semiconductor RF OUTPUT ...

Page 5

... MD7P19130H/HS Rev. 2 Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C6 B1 Single--ended λ λ Quadrature combined 4 4 λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 4. C10 C7 C12 C11 C8 C9 MD7P19130HR3 MD7P19130HSR3 ...

Page 6

... OUTPUT POWER (WATTS) out Figure 7. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --28 --4 0 --30 --8 --0.5 --32 --12 --1 --16 --1.5 --34 --36 --20 --2 --38 --24 --2.5 2020 2040 100 200 -- --25 40 --30 --35 35 --40 30 PARC --45 25 --50 20 100 110 120 RF Device Data Freescale Semiconductor ...

Page 7

... S11 Vdc 1250 1550 1650 1750 1850 1950 2050 f, FREQUENCY (MHz) Figure 9. Broadband Frequency Response RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS --40° --40°C C 25°C 85°C η Vdc 1250 mA 1960 MHz DD DQ ACPR 85° OUTPUT POWER (WATTS) AVG. out Efficiency and ACPR versus Output Power ...

Page 8

... MD7P19130HR3 MD7P19130HSR3 8 W- -CDMA TEST SIGNAL 10 0 --10 --20 --30 --40 --50 --60 --ACPR in 3.84 MHz Integrated BW --70 -- --90 --100 --9 --7.2 Figure 12. Single- -Carrier W- -CDMA Spectrum 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 9 ...

Page 9

... Ω o Figure 13. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 1880 MHz f = 2040 MHz f = 2040 MHz Z load f = 1880 MHz Vdc 1250 mA Avg out source MHz Ω 1880 7.37 + j1.00 1.84 -- j3.56 1900 7.33 + j0.96 1.78 -- j3.37 1920 7.27 + j0.93 1 ...

Page 10

... P1dB = 52.67 dBm (185 Vdc 1250 mA, Pulsed μsec(on), 10% Duty Cycle 1960 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source load Ω Ω P1dB 7.15 -- j1.86 0.84 -- j2.99 Figure 14. Pulsed CW Output Power versus Input Power @ 28 V Actual Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MD7P19130HR3 MD7P19130HSR3 11 ...

Page 12

... MD7P19130HR3 MD7P19130HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MD7P19130HR3 MD7P19130HSR3 13 ...

Page 14

... MD7P19130HR3 MD7P19130HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

... Updated Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal, to better represent production test signal • Updated Fig. 15, Single--Carrier W--CDMA Spectrum, to better represent production test signal • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description MD7P19130HR3 MD7P19130HSR3 15 ...

Page 16

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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