MRF6S23100HR3 Freescale Semiconductor, MRF6S23100HR3 Datasheet - Page 7

• Manufacturer Part Number: MRF6S23100HR3
• Description: MOSFET RF N-CHAN 28V 20W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23100HR3

• Transistor Type: N-Channel
• Frequency: 2.3GHz
• Gain: 15.4dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 67% Clipping, Single-Carrier Test Signal
0
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
2
PEAK-T O-A VERAGE (dB)
4
Figure 12. MTTF Factor versus Junction Temperature
10
10
10
10
8
7
6
5
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
6
110
TYPICAL CHARACTERISTICS
W-CDMA TEST SIGNAL
8
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
150
10
out
170
= 20 W Avg., and η
190
+20
+30
-10
-20
-30
-40
-50
-60
-70
-80
0
-25
210
-IM3 in
3.84 MHz BW
-2 0
D
Figure 14. 2‐Carrier W‐CDMA Spectrum
= 23.5%.
-15
230
MRF6S23100HR3 MRF6S23100HSR3
-10
-ACPR in
3.84 MHz BW
250
f, FREQUENCY (MHz)
-5
3.84 MHz
Channel BW
0
+ACPR in
3.84 MHz BW
5
10
+IM3 in
3.84 MHz BW
15
20
25
7