MRF8S9100HR5 Freescale Semiconductor, MRF8S9100HR5 Datasheet
MRF8S9100HR5
Specifications of MRF8S9100HR5
Available stocks
Related parts for MRF8S9100HR5
MRF8S9100HR5 Summary of contents
Page 1
... Case Operating Temperature (1,2) Operating Junction Temperature 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor = 500 mA ...
Page 2
... W CW 920 MHz out 18 19 51.6 — — --12.4 --9 100 — — = 500 mA out G IRL η (dB) (%) (dB) 19.3 51.6 --12.4 19.3 52.9 --14.3 19.1 54.1 --12.2 (continued) RF Device Data Freescale Semiconductor Unit °C/W Unit μAdc μAdc μAdc Vdc Vdc Vdc ...
Page 3
... Output Power Variation over Temperature (--30°C to +85°C) Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V 920--960 MHz EDGE Modulation Frequency 920 MHz 940 MHz 960 MHz RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) A Symbol = 28 Vdc P1dB IMD ...
Page 4
... AD255A--0300--55--11 C21 C22 C20 V DS C17 C18 C19 C16 C11 C13 C14 C12 C10 MRF8S9100H Rev. 2 Part Number Manufacturer Fair--Rite ATC ATC ATC ATC Kemet ATC ATC ATC ATC ATC Kemet Multicomp Coilcraft Vishay Arlon RF Device Data Freescale Semiconductor ...
Page 5
... Center Frequency of 940 MHz --20 IM3--L IM3--U --30 IM5--U IM5--L --40 IM7--L --50 IM7--U -- TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two- -Tone Spacing RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η IRL = 28 Vdc CW 500 mA out DQ 820 840 860 880 900 920 ...
Page 6
... OUTPUT POWER (WATTS) out versus Output Power = 700 960 MHz 940 MHz 920 MHz η D 960 MHz 920 MHz EVM 940 MHz OUTPUT POWER (WATTS) AVG. out Output Power --5 --10 -- Vdc --20 = 500 mA --25 1100 1200 RF Device Data Freescale Semiconductor 90 100 100 ...
Page 7
... Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz Center 1.96 GHz 200 kHz Figure 11. EDGE Spectrum ...
Page 8
... P1dB 3.96 -- j2.74 1.60 + j0.12 940 P1dB 3.67 -- j2.95 1.57 + j0.22 960 P1dB 3.31 -- j3.07 1.53 + j0.32 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual f = 960 MHz P3dB dBm 53.0 52.9 53.2 Z load Ω RF Device Data Freescale Semiconductor ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9100HR3 MRF8S9100HSR3 9 ...
Page 10
... MRF8S9100HR3 MRF8S9100HSR3 10 RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRF8S9100HR3 MRF8S9100HSR3 11 ...
Page 12
... MRF8S9100HR3 MRF8S9100HSR3 12 RF Device Data Freescale Semiconductor ...
Page 13
... The following table summarizes revisions to this document. Revision Date 0 Sept. 2009 • Initial Release of Data Sheet 1 Oct. 2010 • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S9100HR3 MRF8S9100HSR3 13 ...
Page 14
... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...