MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet - Page 3

MOSFET RF N-CH 28V 23W NI780

MRF7S15100HR3

Manufacturer Part Number
MRF7S15100HR3
Description
MOSFET RF N-CH 28V 23W NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S15100HR3

Transistor Type
N-Channel
Frequency
1.51GHz
Gain
19.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
23W
Power Gain (typ)@vds
19.5dB
Frequency (min)
1.47GHz
Frequency (max)
1.51GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
176@28VpF
Output Capacitance (typ)@vds
300@28VpF
Reverse Capacitance (typ)
0.6@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S15100HR3
Manufacturer:
FREESCALE
Quantity:
21
Part Number:
MRF7S15100HR3
Manufacturer:
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Quantity:
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RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 90 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Average Deviation from Linear Phase in 40 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 1490 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
@ 1 dB Compression Point, CW
out
= 100 W CW
`
30 dBc
out
Characteristic
= 100 W CW, f = 1490 MHz
out
where IMD Third Order
(T
out
A
out
= 25°C unless otherwise noted)
= 23 W Avg.
= 100 W CW,
DD
= 28 Vdc, I
(continued)
Symbol
VBW
IMD
ΔP1dB
Delay
P1dB
ΔΦ
ΔG
G
Φ
sym
F
DQ
res
= 600 mA, 1470 - 1510 MHz Bandwidth
Min
MRF7S15100HR3 MRF7S15100HSR3
0.010
0.007
Typ
100
0.2
4.5
1.9
40
70
23
Max
dB/°C
W/°C
MHz
MHz
Unit
dB
W
ns
°
°
3

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