MRF6S27050HSR5 Freescale Semiconductor, MRF6S27050HSR5 Datasheet

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MRF6S27050HSR5

Manufacturer Part Number
MRF6S27050HSR5
Description
IC MOSFET RF N-CHAN NI-780S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S27050HSR5

Transistor Type
N-Channel
Frequency
2.62GHz
Gain
16dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
500mA
Voltage - Test
28V
Power - Output
7W
Package / Case
NI-780S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2500 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
500 mA, P
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 7 Watts Avg., f = 2615 MHz, Channel Bandwidth =
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF6S27050H
CASE 465A - 06, STYLE 1
MRF6S27050HR3 MRF6S27050HSR3
CASE 465 - 06, STYLE 1
2500 - 2700 MHz, 7 W AVG., 28 V
MRF6S27050HSR3
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27050HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +68
- 0.5, +12
Value
0.85
0.98
150
225
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6S27050HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc Vdc 2 2.8 4 Vdc — 0.21 0.3 Vdc — 0.83 — pF — 232 — Avg CDMA 2615 MHz, out 20.5 22.5 — 42.5 — dBc — — Device Data Freescale Semiconductor ...

Page 3

... V Tantalum Capacitor C9, C10 10 μ Tantalum Capacitors C12, C13 1.0 μ Chip Capacitors C14 330 μ Electrolytic Capacitor C15 47 μ Electrolytic Capacitor R1 2.7 Ω, 1/4 W Chip Resistor RF Device Data Freescale Semiconductor Z10 Z11 Z12 Z6 Z7 DUT Z10 0.091″ x 0.753″ Microstrip Z11 0.150″ ...

Page 4

... B2 C4 Top Bottom C1 Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout MRF6S27050HR3 MRF6S27050HSR3 C11 C14 C9 C10 C15 C13 C12 C2 MRF6S27050 Rev Device Data Freescale Semiconductor ...

Page 5

... MHz 2601.25 MHz Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc (Avg.), I = 500 mA DD out DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8 0.01% Probability (CCDF) ...

Page 6

... DQ IM3−U IM3−L IM5−L IM5−U IM7−L IM7− TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −15 −20 −25 −30 ACPR −35 −40 −45 −50 −55 ALT1 −60 − Device Data Freescale Semiconductor 100 ...

Page 7

... DQ WiMAX, 802.16, 64 QAM 3/4, 4 Bursts 7 MHz Channel Bandwidth 2600 MHz η D EVM OUTPUT POWER (dBm) out Figure 13. Drain Efficiency and Error Vector Magnitude versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 64 17 −30_C 56 25_C 85_C Vdc 8 = 500 100 0.3 Figure 12. Power Gain versus Output Power ...

Page 8

... Figure 16. Single - Carrier W - CDMA Spectrum 3.84 MHz Channel BW −ACPR in 3.84 MHz −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 7.2 9 ...

Page 9

... Figure 17. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 2700 MHz f = 2500 MHz = 25 Ω 2500 MHz Z load f = 2700 MHz Vdc 500 mA Avg out source load MHz W W 2500 6.897 + j6.212 11.524 - j6.193 2525 7.062 + j6.412 11.325 - j6.396 2550 7 ...

Page 10

... U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 11

... Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers • Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description to V ...

Page 12

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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