MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 8

• Manufacturer Part Number: MRF7S21080HR5
• Description: MOSFET RF N-CH 22W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S21080HR3 MRF7S21080HSR3
8
0.0001
19
18
17
16
15
0.001
0.01
100
0.1
0
10
1
64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 12. Power Gain versus Output Power
0
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
P
40
out
Compressed Output
Signal @ 22 W P
2
, OUTPUT POWER (WATTS) CW
PEAK−TO−AVERAGE (dB)
V
DD
4
= 24 V
80
out
28 V
6
120
I
f = 2140 MHz
DQ
Input Signal
TYPICAL CHARACTERISTICS
32 V
= 800 mA
W - CDMA TEST SIGNAL
8
160
10
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
10
10
10
10
8
7
6
5
90
−9
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
Figure 15. Single - Carrier W - CDMA Spectrum
−7.2
110
−ACPR in 3.84 MHz
Integrated BW
−5.4
130
T
DD
J
−3.6
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
f, FREQUENCY (MHz)
150
−1.8
Channel BW
3.84 MHz
out
170
0
= 22 W Avg., and η
Freescale Semiconductor
1.8
190
−ACPR in 3.84 MHz
Integrated BW
3.6
210
RF Device Data
D
5.4
= 32%.
230
7.2
250
9