MRF7S19120NR1 Freescale Semiconductor, MRF7S19120NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF7S19120NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S19120NR1

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 36W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF7S19120NR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
1990 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Per JESD22-A113, IPC/JEDEC J-STD-020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
DS
D
D
D
GS
GS
GS
= 270 μAdc)
= 1200 mAdc, Measured in Functional Test)
= 2.7 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Test Methodology
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
PAR
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
= 1200 mA, P
3
oss
rss
iss
ps
D
0.15
16.5
Min
Package Peak Temperature
1.2
5.7
—
—
—
—
—
—
30
—
—
out
2
= 36 W Avg., f = 1930 MHz and f =
0.275
-38.5
1.65
1.03
260
Typ
600
-10
2.7
6.1
18
32
—
—
—
2
III (Minimum)
A (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
-35.5
Max
0.35
19.5
2.7
3.5
10
36
-7
—
—
—
—
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
°C
pF
pF
pF
%