MRFG35020AR1 Freescale Semiconductor, MRFG35020AR1 Datasheet - Page 6
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MRFG35020AR1
Manufacturer Part Number
MRFG35020AR1
Description
TRANSISTOR RF 20W GAAS NI-360
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFG35020AR1.pdf
(12 pages)
Specifications of MRFG35020AR1
Transistor Type
pHEMT FET
Frequency
3.5GHz
Gain
11.5dB
Voltage - Rated
15V
Current - Test
300mA
Voltage - Test
12V
Power - Output
20W
Package / Case
NI-360
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35020AR1
Manufacturer:
FREESCALE
Quantity:
20 000
MRFG35020AR1
6
−50
−10
−20
−30
−40
14
12
10
16
14
12
10
8
6
4
2
0
Channel Power Ratio and IRL versus Output Power
8
6
4
3400
24
24
Figure 5. Single - Channel W - CDMA Power Gain
Figure 7. Single - Channel W - CDMA Power Gain
NOTE: Data is generated from the test circuit shown.
V
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 6. Single - Channel W - CDMA Adjacent
V
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
DS
and Drain Efficiency versus Output Power
DS
26
26
= 12 Vdc, I
and Drain Efficiency versus Frequency
= 12 Vdc, I
G
η
η
ps
D
TYPICAL CHARACTERISTICS
D
28
28
3450
ACPR
DQ
G
IRL
DQ
P
ps
P
= 300 mA, f = 3500 MHz, Single−Carrier
out
out
= 300 mA, P
30
30
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
V
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
DS
32
= 12 Vdc, I
32
3500
out
= 33 dBm
34
34
DQ
= 300 mA, f = 3500 MHz
30 36
36
3550
38
38
40
40
3600
42
42
60
50
40
30
20
10
0
0
−10
−20
−30
−40
−50
32
30
28
26
24
22
20
Freescale Semiconductor
RF Device Data