MRFG35020AR1 Freescale Semiconductor, MRFG35020AR1 Datasheet - Page 6

• Manufacturer Part Number: MRFG35020AR1
• Description: TRANSISTOR RF 20W GAAS NI-360
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35020AR1

• Transistor Type: pHEMT FET
• Frequency: 3.5GHz
• Gain: 11.5dB
• Voltage - Rated: 15V
• Current - Test: 300mA
• Voltage - Test: 12V
• Power - Output: 20W
• Package / Case: NI-360
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

MRFG35020AR1
6
−50
−10
−20
−30
−40
14
12
10
16
14
12
10
8
6
4
2
0
Channel Power Ratio and IRL versus Output Power
8
6
4
3400
24
24
Figure 5. Single - Channel W - CDMA Power Gain
Figure 7. Single - Channel W - CDMA Power Gain
NOTE: Data is generated from the test circuit shown.
V
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 6. Single - Channel W - CDMA Adjacent
V
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
DS
and Drain Efficiency versus Output Power
DS
26
26
= 12 Vdc, I
and Drain Efficiency versus Frequency
= 12 Vdc, I
G
η
η
ps
D
TYPICAL CHARACTERISTICS
D
28
28
3450
ACPR
DQ
G
IRL
DQ
P
ps
P
= 300 mA, f = 3500 MHz, Single−Carrier
out
out
= 300 mA, P
30
30
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
V
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
DS
32
= 12 Vdc, I
32
3500
out
= 33 dBm
34
34
DQ
= 300 mA, f = 3500 MHz
30 36
36
3550
38
38
40
40
3600
42
42
60
50
40
30
20
10
0
0
−10
−20
−30
−40
−50
32
30
28
26
24
22
20
Freescale Semiconductor
RF Device Data