MRF5S4125NBR1 Freescale Semiconductor, MRF5S4125NBR1 Datasheet - Page 5

• Manufacturer Part Number: MRF5S4125NBR1
• Description: MOSFET RF SGL 450MHZ TO-272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF5S4125NBR1

• Transistor Type: N-Channel
• Frequency: 465MHz
• Gain: 23dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 25W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
25
24
23
22
21
20
19
18
1
I
DQ
= 1650 mA
Figure 5. Two - Tone Power Gain versus
1375 mA
1100 mA
550 mA
825 mA
P
out
V
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
DD
, OUTPUT POWER (WATTS) PEP
= 28 Vdc
Output Power
10
25
24
23
22
21
20
19
18
17
25
24
23
22
21
20
19
18
17
420
420
ACPR
ACPR
ALT1
ALT1
IRL
IRL
G
G
η
η
ps
ps
D
D
430
430
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
V
I
DQ
440
440
DD
TYPICAL CHARACTERISTICS
100
= 1100 mA, Single−Carrier N−CDMA
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
450
450
V
I
1.2288 MHz, Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
DQ
200
DD
= 1100 mA, Single−Carrier N−CDMA
= 28 Vdc, P
out
300
460
460
= 25 W (Avg.)
out
470
470
= 58 W (Avg.)
−10
−20
−30
−40
−50
480
480
1
Figure 6. Third Order Intermodulation Distortion
V
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
DD
490
490
= 28 Vdc
500
500
P
out
36
32
28
24
52
48
44
40
−45
−50
−55
−60
−20
−30
−40
−50
−65
−60
out
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
1375 mA
MRF5S4125NR1 MRF5S4125NBR1
= 25 Watts Avg.
= 58 Watts Avg.
10
0
0
−5
−10
−15
−20
−5
−10
−15
−20
I
DQ
= 550 mA
1100 mA
562.5 mA
100
825 mA
200
300
5