MRF7S38010HR3 Freescale Semiconductor, MRF7S38010HR3 Datasheet
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MRF7S38010HR3
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MRF7S38010HR3 Summary of contents
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... RF POWER MOSFETs CASE 465I - 02, STYLE 400 - 240 MRF7S38010HR3 CASE 465J - 02, STYLE 400S - 240 MRF7S38010HSR3 Symbol Value Unit V - 0.5, +65 Vdc 6.0, +10 Vdc GS V 32, +0 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 2.05 2.24 MRF7S38010HR3 MRF7S38010HSR3 1 ...
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... MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S38010HR3 MRF7S38010HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
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... MHz Bandwidth — 20 — — 1.04 — — 2.22 — — 1.88 — — 25.9 — — 0.025 — — 0.246 — MRF7S38010HR3 MRF7S38010HSR3 Unit dBc dB % rms MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Microstrip Z9 0.116″ x 0.367″ Microstrip Z10 0.064″ x 0.307″ Microstrip Figure 1. MRF7S38010HR3(HSR3) Test Circuit Schematic Table 5. MRF7S38010HR3(HSR3) Test Circuit Component Designations and Values Part B1 95 Ω, 100 MHz Long Ferrite Bead, Surface Mount C1 2.2 pF Chip Capacitor C2 2 ...
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... MRF7S38010H/HS Rev. 1 Figure 2. MRF7S38010HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C4 C3 MRF7S38010HR3 MRF7S38010HSR3 ...
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... Vdc 160 3495 MHz 3505 MHz 11 Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S38010HR3 MRF7S38010HSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.), I = 160 mA DD out 802.16d, 64 QAM 4 Bursts, 7 MHz Channel 4, Bandwidth, Input Signal PAR = 9 ...
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... IM3 −U IM3 −L IM7 −U IM7 −L 10 TWO −TONE SPACING (MHz) versus Tone Spacing −15 −30_C −20 25_C 85_C −25 −30 −30_C −35 − −30_C C −45 25_C 85_C −50 −55 − 3500 MHz OUTPUT POWER (WATTS) CW out MRF7S38010HR3 MRF7S38010HSR3 100 = 160 ...
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... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S38010HR3 MRF7S38010HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 17%. DD out ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load Output Matching Network MRF7S38010HR3 MRF7S38010HSR3 9 ...
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... MRF7S38010HR3 MRF7S38010HSR3 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF7S38010HR3 MRF7S38010HSR3 11 ...
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... MRF7S38010HR3 MRF7S38010HSR3 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF7S38010HR3 MRF7S38010HSR3 13 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Aug. 2007 • Initial Release of Data Sheet MRF7S38010HR3 MRF7S38010HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF7S38010HR3 MRF7S38010HSR3 15 ...