MRF6V2150NBR1 Freescale Semiconductor, MRF6V2150NBR1 Datasheet - Page 14
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MRF6V2150NBR1
Manufacturer Part Number
MRF6V2150NBR1
Description
MOSFET RF N-CH TO-272-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6V2150NBR5.pdf
(18 pages)
Specifications of MRF6V2150NBR1
Transistor Type
N-Channel
Frequency
220MHz
Gain
25dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
450mA
Voltage - Test
50V
Power - Output
150W
Package / Case
TO-272-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
150W
Power Gain (typ)@vds
32.3dB
Frequency (min)
10MHz
Frequency (max)
450MHz
Package Type
TO-272 WB EP
Pin Count
5
Input Capacitance (typ)@vds
163@50VpF
Output Capacitance (typ)@vds
93@50VpF
Reverse Capacitance (typ)
1.6@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
78.7%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF6V2150NBR1
Manufacturer:
TI
Quantity:
10 000
Part Number:
MRF6V2150NBR1
Manufacturer:
FREESCALE
Quantity:
20 000
MRF6V2150NR1 MRF6V2150NBR1
RF Device Data
Freescale Semiconductor
14