MRF9030NR1 Freescale Semiconductor, MRF9030NR1 Datasheet - Page 6

• Manufacturer Part Number: MRF9030NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF9030NR1

• Transistor Type: N-Channel
• Frequency: 945MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 250mA
• Voltage - Test: 26V
• Power - Output: 30W
• Package / Case: TO-270-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Forward Transconductance (typ): 2.7S
• Input Capacitance (typ)@vds: 49@26VpF
• Output Capacitance (typ)@vds: 27@26VpF
• Reverse Capacitance (typ): 1.2@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 41%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 139000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

6
MRF9030NR1
10
10
10
10
22
20
18
16
14
12
10
10
Figure 9. MTTF Factor versus Junction Temperature
9
8
7
0.1
90
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
100
Figure 8. Power Gain, Efficiency and IMD
110
TYPICAL CHARACTERISTICS
P
120
T
out
J
, JUNCTION TEMPERATURE (°C)
D
versus Output Power
G
η
IMD
, OUTPUT POWER (WATTS) PEP
2
ps
for MTTF in a particular application.
130
1
140
150
160
170
10
V
I
f1 = 945 MHz
f2 = 945.1 MHz
180
DQ
DD
= 250 mA
= 26 Vdc
190
200
2
100
210
60
40
20
0
−20
−40
−60
Freescale Semiconductor
RF Device Data