MRF6S20010NR1 Freescale Semiconductor, MRF6S20010NR1 Datasheet - Page 22

• Manufacturer Part Number: MRF6S20010NR1
• Description: MOSFET RF N-CH 28V 10W TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010NR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 1W
• Power Gain (typ)@vds: 15.5/15.5/15.5/16dB
• Frequency (min): 1.6GHz
• Frequency (max): 2.2GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 0.12@28VpF
• Output Capacitance (typ)@vds: 20@28VpF
• Reverse Capacitance (typ): 11.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 36%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/2-Carrier W-CDMA/2-Tone/GSM EDGE/IS-95
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
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