MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet - Page 4
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MRF1535FNT1
Manufacturer Part Number
MRF1535FNT1
Description
IC MOSFET RF N-CHAN TO272-6
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF1535NT1.pdf
(19 pages)
Specifications of MRF1535FNT1
Transistor Type
N-Channel
Frequency
520MHz
Gain
13.5dB
Voltage - Rated
40V
Current Rating
6A
Current - Test
500mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
TO-272-6
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
6A
Drain Source Voltage (max)
40V
Output Power (max)
35W
Power Gain (typ)@vds
13.5dB
Frequency (min)
135MHz
Frequency (max)
520MHz
Package Type
TO-272 EP
Pin Count
6
Drain Source Resistance (max)
700@5Vmohm
Input Capacitance (typ)@vds
250(Max)@12.5VpF
Output Capacitance (typ)@vds
150(Max)@12.5VpF
Reverse Capacitance (typ)
20(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
135000mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF1535FNT1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF1535FNT1
Manufacturer:
FREESCALE
Quantity:
20 000
MRF1535NT1 MRF1535FNT1
4
19
18
17
16
15
14
13
12
50
45
40
35
30
70
60
50
40
30
20
10
11
200
Figure 6. Output Power versus Biasing Current
10
10
Figure 8. Output Power versus Supply Voltage
Figure 4. Gain versus Output Power
400
20
11
V
135 MHz
DD
P
175 MHz
155 MHz
I
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
600
12
30
175 MHz
175 MHz
TYPICAL CHARACTERISTICS, 135 - 175 MHz
800
40
13
155 MHz
V
V
P
I
P
DD
DQ
DD
in
in
135 MHz
= 30 dBm
= 30 dBm
= 12.5 Vdc
= 250 mA
= 12.5 Vdc
1000
50
14
155 MHz
135 MHz
1200
60
15
80
70
60
50
40
30
80
70
60
50
40
80
70
60
50
40
Figure 7. Drain Efficiency versus Biasing Current
200
10
10
Figure 5. Drain Efficiency versus Output Power
Figure 9. Drain Efficiency versus Supply Voltage
20
400
11
V
P
I
DD
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
30
, BIASING CURRENT (mA)
155 MHz
175 MHz
135 MHz
175 MHz
600
12
155 MHz
40
135 MHz
175 MHz
155 MHz
50
Freescale Semiconductor
800
13
135 MHz
I
P
60
DQ
V
P
in
DD
in
V
= 30 dBm
RF Device Data
= 250 mA
= 30 dBm
DD
1000
= 12.5 Vdc
14
= 12.5 Vdc
70
1200
80
15