MW6S010NR1 Freescale Semiconductor, MW6S010NR1 Datasheet - Page 9

• Manufacturer Part Number: MW6S010NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 125 mA
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1.5GHz
• Package Type: TO-270
• Pin Count: 3
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: TO-270
• Msl: MSL 3 - 168 Hours
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Operating Frequency Max: 900MHz
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S010NR1; MW6S010NR1TR

RF Device Data
Freescale Semiconductor
Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 450 MHz
B1, B2
C1
C2, C15
C3, C14
C4, C9, C10, C13
C5
C6, C11
C7, C8, C12
L1
R1
R2
R3
R4
R5
R6
T1
T2
R3
R4
V
BIAS
T1
INPUT
RF
Z1
Z2
Z3
Z4, Z7
Part
T2
R1
C6
R2
0.540″ x 0.080″ Microstrip
0.365″ x 0.080″ Microstrip
0.225″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic — 450 MHz
C5
Z1
C1
+
C7
Ferrite Bead
1 μF, 35 V Tantalum Capacitor
22 μF, 35 V Tantalum Capacitors
0.1 μF Chip Capacitors
330 pF Chip Capacitors
4.3 pF Chip Capacitor
0.6 - 8.0 pF Variable Capacitors
4.7 pF Chip Capacitors
39 μH Chip Inductor
10 Ω Chip Resistor
1 kΩ Chip Resistor
1.2 kΩ Chip Resistor
2.2 kΩ Chip Resistor
5 kΩ Potentiometer
1 kΩ Chip Resistor
5 Volt Regulator, Micro 8
NPN Transistor, SOT - 23
R5
Z2
C2
+
C8
Z3
C3
B2
C9
Description
Z4
C4
R6
Z5
Z5
Z6
Z8
PCB
DUT
0.475″ x 0.330″ Microstrip
0.475″ x 0.325″ Microstrip
1.250″ x 0.080″ Microstrip
Rogers ULTRALAM 2000, 0.030″, ε
Z6
L1
2743019447
T491C105K050AT
T491X226K035AT
C1210C104K5RAC
ATC700A331JT150XT
ATC100B4R3JT500XT
27291SL
ATC100B4R7JT500XT
ISC - 1210
CRCW080510R0FKEA
CRCW08051001FKEA
CRCW08051201FKEA
CRCW08052201FKEA
1224W
CRCW12061001FKEA
LP2951CDMR2G
BC847ALT1G
Z7
Part Number
C13
C10
MW6S010NR1 MW6S010GNR1
B1
Z8
C12
C14
r
= 2.55
C15
C11
+
Fair - Rite
Kemet
Kemet
Kemet
ATC
ATC
Johanson
ATC
Vishay
Vishay
Vishay
Vishay
Vishay
Bourns
Vishay
On Semiconductor
On Semiconductor
Manufacturer
OUTPUT
V
RF
SUPPLY
9