BLF6G38-100,112 NXP Semiconductors, BLF6G38-100,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G38-100,112
• Description: TRANS WIMAX PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-100,112

• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061296112

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 1.
EVM
(%)
10
8
6
4
2
0
10
V
EVM as a function of load power;
typical values
DS
1
= 28 V; I
7.2.1 WiMAX signal description
7.2.2 Graphs
7.2 NXP WiMAX signal
Dq
1
= 1050 mA; f = 3500 MHz.
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
Table 8.
Frame contents
Zone 0
Zone 0
Zone 0
FCH
data
data
10
Frame structure
P
2 symbols
2 symbols
44 symbols
L
001aaj033
(W)
Rev. 01 — 11 November 2008
10
30 subchannels; P
BLF6G38-100; BLF6G38LS-100
2
4 subchannels
26 subchannels
30 subchannels
Fig 2.
(dB)
G
P
18
16
14
12
10
L
10
= P
V
Power gain and drain efficiency as function of
average load power; typical values
1
DS
L(nom)
= 28 V; I
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
+ 3.86 dB.
Dq
WiMAX power LDMOS transistor
1
= 1050 mA; f = 3500 MHz.
G
D
P
10
g
/ T
P
L(AV)
© NXP B.V. 2008. All rights reserved.
b
= 1 / 8;
001aaj034
(W)
Data length
3 bit
692 bit
10000 bit
10
2
40
30
20
10
0
(%)
D
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