BLF6G27LS-75,112 NXP Semiconductors, BLF6G27LS-75,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G27LS-75,112
• Description: TRANS WIMAX PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-75,112

• Transistor Type: LDMOS
• Frequency: 2.5GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 600mA
• Voltage - Test: 28V
• Power - Output: 9W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063217112

NXP Semiconductors
BLF6G27-75_6G27LS-75_1
Product data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
885k
p
19
18
17
16
15
14
20
30
40
50
60
70
0
0
V
Power gain as a function of load power;
typical values
V
Adjacent channel power ratio (885 kHz) as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
7.3 Single carrier IS-95
(1)
(3)
(2)
Dq
Dq
(2)
(1)
(3)
= 600 mA.
= 600 mA.
20
20
30
30
40
40
001aak976
001aak978
P
P
L
L
(W)
(W)
Rev. 01 — 22 October 2009
50
50
BLF6G27-75; BLF6G27LS-75
Fig 4.
Fig 6.
ACPR
(dBc)
(%)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
1980k
50
40
30
20
10
40
50
60
70
80
0
0
V
Drain efficiency as a function of load power;
typical values
0
V
Adjacent channel power ratio (1980 kHz) as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
WiMAX power LDMOS transistor
= 600 mA.
= 600 mA.
20
20
(2)
(1)
(3)
30
30
(1)
(2)
(3)
© NXP B.V. 2009. All rights reserved.
40
40
001aak977
001aak979
P
P
L
L
(W)
(W)
50
50
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