BLF6G20-110,112 NXP Semiconductors, BLF6G20-110,112 Datasheet - Page 5

IC BASESTATION FINAL SOT502A

BLF6G20-110,112

Manufacturer Part Number
BLF6G20-110,112
Description
IC BASESTATION FINAL SOT502A
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF6G20-110,112

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
29A
Current - Test
900mA
Voltage - Test
28V
Power - Output
25W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
29 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061128112
BLF6G20-110
BLF6G20-110

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G20-110,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
8. Test information
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
Table 8.
[1]
[2]
[3]
Component
C1
C2
C3
C4, C8
C5, C7, C12, C13
C6, C10, C11
C9
C14
C15
C16
Q1
R1
R2
Fig 4.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
AVX or capacitor of same quality.
C1
INPUTBOARD
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
and thickness = 0.76 mm.
See
Component layout
List of components (see
Table 8
TB
C15
C4
C5
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
BLF6G20-110 or BLF6G20LS-110
SMD resistor
SMD resistor
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
C16
R1
C7
R2
Figure
C6
4).
Q1
C11
C10
C12
C9
Value
8.2 pF
10 pF
100 F; 63 V
4.7 F; 25 V
220 nF; 50 V
13 pF
330 nF; 50 V
1.0 pF
1.5 pF
0.6 pF
-
1.0
2.7
C3
C13
C8
Power LDMOS transistor
C14
© NXP B.V. 2009. All rights reserved.
OUTPUTBOARD
TB
[1]
[1]
[2]
[3]
[1]
[3]
[1]
[1]
[1]
001aah517
Remarks
C2
r
= 3.5
5 of 10

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