BLF6G38-50,135 NXP Semiconductors, BLF6G38-50,135 Datasheet - Page 7

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BLF6G38-50,135

Manufacturer Part Number
BLF6G38-50,135
Description
TRANS WIMAX PWR LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38-50,135

Transistor Type
LDMOS
Frequency
3.4GHz ~ 3.6GHz
Gain
14dB
Voltage - Rated
65V
Current Rating
16.5A
Current - Test
450mA
Voltage - Test
28V
Power - Output
9W
Package / Case
SOT502A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061173135
NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
[1]
[2]
[3]
BLF6G38-50_BLF6G38LS-50
Product data sheet
Component
C1, C4, C5, C6
C2
C3, C8, C9
C7
C10
R1, R2
L1
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
American Technical Ceramics type 100A or capacitor of same quality.
Vishay VJ1206Y104KXB or capacitor of same quality.
TDK C5750X7R1H106M or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
List of components
Table 9
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
ferrite SMD bead
Figure
for list of components.
Table 10.
f
(GHz)
3.4
3.5
3.6
3.8
10.
C3
Measured test circuit impedances
C1
R2
All information provided in this document is subject to legal disclaimers.
BLF6G38-50
INPUT-REV 1A
30RF35
NXP
C2
Rev. 02 — 1 June 2010
C4
R1
BLF6G38-50; BLF6G38LS-50
Value
10 pF
0.7 pF
100 nF
10 μF; 50 V
470 μF; 63 V
9.1 Ω
-
Z
(Ω)
5.48 − j9.38
5.39 − j9.43
5.55 − j9.15
9.60 − j12.48
i
C6
C8
C5
[1]
[1]
[2]
[3]
C9
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C7
BLF6G38-50
OUTPUT-REV 1A
30RF35
NXP
WiMAX power LDMOS transistor
r
= 3.5 and thickness = 0.76 mm.
L1
Z
(Ω)
12.42 − j4.58
10.41 − j5.31
14.31 − j7.04
17.70 − j11.57
o
001aah404
C10
© NXP B.V. 2010. All rights reserved.
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