BLF6G20LS-110,118 NXP Semiconductors, BLF6G20LS-110,118 Datasheet - Page 2

• Manufacturer Part Number: BLF6G20LS-110,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-110,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 25W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 1.93GHz
• Frequency (max): 2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 10.5S
• Drain Source Resistance (max): 160@6.15Vmohm
• Reverse Capacitance (typ): 2.1@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060896118; BLF6G20LS-110 /T3; BLF6G20LS-110 /T3

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