BLF6G20LS-75,118 NXP Semiconductors, BLF6G20LS-75,118 Datasheet - Page 60
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G20LS-75,118
Manufacturer Part Number
BLF6G20LS-75,118
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G20LS-75,118
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
18A
Current - Test
550mA
Voltage - Test
28V
Power - Output
29.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.235 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060922118
BLF6G20LS-75 /T3
BLF6G20LS-75 /T3
BLF6G20LS-75 /T3
BLF6G20LS-75 /T3
RF
Wideband transistors [RF small signal] (continued)
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/rftransistors
60
G
Product
BFR520
BFR520T
BFR540
BFS505
BFS520
BFS540
PRF949
BFG310W/XR
BFG310/XR
BFG325W/XR
BFG325/XR
BFG480W
BFG410W
BFG424F
BFG424W
BFG425W
UM
= Maximum Unilateral Gain
Curve
4, 5
4, 5
4, 5
4, 5
20
20
21
19
20
21
29
26
27
27
27
Package
SOT23
SOT416
SOT23
SOT323
SOT323
SOT323
SOT416
SOT343XR
SOT143XR
SOT343XR
SOT143XR
SOT343
SOT343
SOT343F
SOT343
SOT343
(GHz)
Typ
14
14
14
14
21
22
25
25
25
f
9
9
9
9
9
9
9
T
V ceo
4.5
4.5
4.5
4.5
4.5
(V)
15
15
15
15
15
15
10
6
6
6
6
Maximum values
(mA)
120
120
250
70
70
18
70
50
10
10
35
35
12
30
30
30
I c
(mW)
300
150
500
150
300
500
150
210
210
360
135
135
135
P
60
60
54
tot
Polarity
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
18.3
18.3
G
(dB)
15
15
14
17
15
14
16
18
18
UM
(dB)
1.1
1.1
1.3
1.2
1.1
1.3
1.5
1.0
1.0
1.1
1.1
1.2
0.9
0.8
0.8
0.8
NF
(MHz)
1000
1000
1000
3000
3000
900
900
900
900
900
900
900
900
900
900
900
@
G
(dB)
10
16
10
21
23
22
20
9
9
7
9
8
UM
(dB)
1.9
1.9
2.1
1.9
1.9
2.1
2.1
1.8
1.2
1.2
1.2
1.2
NF
(MHz)
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
@
(mV)
550
V o
(dBm)
1.8
1.8
8.7
8.7
17
17
21
17
21
20
12
12
12
PI
4
5
(dBm)
19.4
19.4
ITO
8.5
8.5
26
26
34
10
26
34
28
15
22
22
22
@ I c &
(mA)
20
20
40
20
40
15
15
80
10
25
25
25
5
5
5
V ce
(V)
6
6
8
6
6
8
3
3
3
3
2
2
2
2
2