BLF6G20-40,112 NXP Semiconductors, BLF6G20-40,112 Datasheet - Page 2

• Manufacturer Part Number: BLF6G20-40,112
• Description: TRANSISTOR PWR LDMOS SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-40,112

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18.8dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 360mA
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: SOT-608A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060891112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G20-40_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G20-40
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
-
Rev. 01 — 19 January 2009
Description
flanged ceramic package; 2 mounting holes; 2 leads
Conditions
[1]
Conditions
T
Simplified outline
case
= 80 C; P
1
2
L(AV)
Power LDMOS transistor
BLF6G20-40
3
= 12.5 W
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
2
Max
65
+13
13
+150
225
sym112
Version
SOT608A
Typ Unit
1.7
1
3
2 of 11
Unit
V
V
A
K/W
C
C