ATF-34143-BLKG Avago Technologies US Inc., ATF-34143-BLKG Datasheet - Page 5
![IC PHEMT 1.9GHZ 60MA LN SOT-343](/photos/5/63/56361/sot-343_pkg_sml.jpg)
ATF-34143-BLKG
Manufacturer Part Number
ATF-34143-BLKG
Description
IC PHEMT 1.9GHZ 60MA LN SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-34143-TR1G.pdf
(15 pages)
Specifications of ATF-34143-BLKG
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
17.5dB
Voltage - Rated
5.5V
Current Rating
145mA
Noise Figure
0.5dB
Current - Test
60mA
Voltage - Test
4V
Power - Output
20dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
725 mW
Drain Source Voltage Vds
5.5 V
Gate-source Breakdown Voltage
- 5 V
Continuous Drain Current
145 mA
Maximum Operating Temperature
+ 160 C
Maximum Drain Gate Voltage
- 5 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation Pd
725mW
Noise Figure Typ
0.5dB
Rf Transistor Case
SOT-343
No. Of Pins
4
Frequency Max
6GHz
Filter Terminals
SMD
Frequency Min
450MHz
Rohs Compliant
Yes
Drain Current Idss Max
60mA
Drain-source Breakdown Voltage
5.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1863
ATF-34143-BLKG
ATF-34143-BLKG
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-34143-BLKG
Manufacturer:
AVAGO
Quantity:
100 000
Part Number:
ATF-34143-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-34143 Typical Performance Curves, continued
Note:
1. P
5
Figure 14. Fmin and G
at V
Figure 17. NF, Gain, OP1dB and OIP3 vs. I
5.8 GHz Tuned for Noise Figure.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P
current source as is typically done with active biasing. As an example, at a V
is approached.
1dB
25
20
15
10
30
27
24
21
18
15
12
DS
9
6
3
0
0
0
= 4 V, I
measurements are performed with passive biasing. Quicescent drain current, I
DS
20
= 60 mA.
2000
40
FREQUENCY (GHz)
a
vs. Frequency and Temperature
I
DSQ
-40 C
85 C
25 C
4000
60
(mA)
[1]
80
6000
1dB
DS
100
Gain
OP1dB
OIP3
NF
at 4 V and
. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
8000
120
1.5
1.0
0.5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Figure 18. P
mA at 2 GHz.
Figure 15. P
= 4 V, I
25
20
15
10
33
31
29
27
25
23
21
19
17
-5
5
0
0
0
DS
= 60 mA.
1dB
1dB
2000
, IP3 vs. Frequency and Temperature at V
vs. I
[1]
DS
P
50
OIP3
1dB
FREQUENCY (MHz)
Active Bias Tuned for NF @ 4V, 60
I
DS
DS
4000
(mA)
= 4 V and I
100
DSQ
6000
, is set with zero RF drive applied. As P
DSQ
3 V
4 V
= 10 mA, I
-40 C
85 C
25 C
8000
150
DS
d
increases to 62 mA as a P
Figure 16. NF, Gain, OP1dB and OIP3 vs. I
3.9 GHz Tuned for Noise Figure.
Figure 19. P
4V, 60 mA at 900 MHz.
DSQ
25
20
15
10
35
30
25
20
15
10
-5
5
0
5
0
the device is running closer to class
0
0
20
1dB
vs. I
40
50
DS
Active Bias Tuned for min NF @
I
60
I
DSQ
DS
1dB
(mA)
(mA)
1dB
is approached,
80
[1]
of +19 dBm
100
100
DS
Gain
OP1dB
OIP3
NF
120
3 V
4 V
at 4 V and
150
140
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0