ATF-511P8-TR2 Avago Technologies US Inc., ATF-511P8-TR2 Datasheet - Page 6

• Manufacturer Part Number: ATF-511P8-TR2
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-511P8-TR2

• Gain: 14.8dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 1A
• Noise Figure: 1.4dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 30dBm
• Package / Case: 8-LPCC
• Drain Source Voltage Vds: 4.5V
• Continuous Drain Current Id: 1A
• Power Dissipation Pd: 3W
• Noise Figure Typ: 1.4dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Drain Current Idss Max: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal P1dB at 4.5 V, 200 mA
ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V, 200 mA
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
Figure 17. P1dB vs. Temp and Freq.
Figure 20. OIP3 vs. I
Figure 23. P1dB vs. I
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
35
30
25
20
15
10
0.5
50
50
1
150
150
1.5
FREQUENCY (GHz)
250
250
I DS (mA)
I DS (mA)
DS
2
DS
and V
and V
2.5
350
350
DS
DS
3
at 2 GHz.
at 900 MHz.
450
450
4.5 V
4 V
3 V
4.5 V
4 V
3 V
-40 °C
25 °C
85 °C
3.5
550
550
4
Figure 18. Gain vs. Temp and Freq.
Figure 21. OIP3 vs. I
Figure 24. Gain vs. I
20
15
10
50
45
40
35
30
25
20
15
10
12
10
5
0
8
6
4
2
0
0.5
50
50
1
150
150
1.5
-40 °C
25 °C
85 °C
FREQUENCY (GHz)
250
250
I DS (mA)
I DS (mA)
DS
DS
2
and V
and V
2.5
350
350
DS
DS
3
at 2 GHz.
at 900 MHz.
450
450
4.5 V
4 V
3 V
4.5 V
4 V
3 V
3.5
550
550
4
Figure 19. PAE vs. Temp and Freq.
Figure 22. P1dB vs. I
Figure 25. Gain vs. I
80
70
60
50
40
30
20
10
35
30
25
20
15
10
22
20
18
16
14
12
10
0
0.5
50
50
1
150
150
1.5
FREQUENCY (GHz)
250
250
I DS (mA)
I DS (mA)
DS
2
DS
and V
and V
2.5
350
350
DS
DS
3
at 900 MHz.
at 2 GHz.
450
450
4.5 V
4 V
3 V
4.5 V
4 V
3 V
-40 °C
25 °C
85 °C
3.5
550
550
4