NE3512S02-A CEL, NE3512S02-A Datasheet - Page 8

• Manufacturer Part Number: NE3512S02-A
• Description: HJ-FET NCH 13.5DB S02
• Manufacturer: CEL

Specifications of NE3512S02-A

• Transistor Type: HFET
• Frequency: 12GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.35dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: S02
• Gate-source Cutoff Voltage: 4 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE DIMENSIONS
S02 (UNIT: mm)
6
2
(Side View)
(Top View)
1
3
0.65 TYP.
3.2±0.2
2.2±0.2
3.2±0.2
C
1.7
Data Sheet PG10592EJ01V0DS
PIN CONNECTIONS
4
1. Source
2. Drain
3. Source
4. Gate
4
(Bottom View)
1
3
2.2±0.2
2
NE3512S02