ATF-331M4-TR1 Avago Technologies US Inc., ATF-331M4-TR1 Datasheet - Page 9

• Manufacturer Part Number: ATF-331M4-TR1
• Description: IC PHEMT LOW NOISE 2GHZ MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-331M4-TR1

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.6dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 19dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 400mW
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): No
• Frequency Max: 2GHz
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9
ATF-331M4 Typical Scattering Parameters, V
Freq.
GHz
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Typical Noise Parameters, V
Freq
GHz
0.50
0.90
1.00
1.50
1.80
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
the gate pad. The output reference plane is at the end of the drain pad.
Mag.
0.82
0.78
0.77
0.75
0.74
0.74
0.72
0.69
0.70
0.73
0.71
0.73
0.74
0.76
0.79
0.86
0.87
0.88
0.89
0.92
0.94
0.94
0.93
F
dB
0.4
0.43
0.44
0.48
0.51
0.52
0.57
0.61
0.69
0.78
0.86
0.95
1.03
1.12
1.2
min
S
11
Ang.
-89.80
-116.90
-130.00
-149.70
-158.00
-162.20
-169.50
-173.80
164.10
150.90
141.80
124.70
113.70
98.50
84.30
62.60
62.70
52.60
45.10
39.20
33.50
28.40
24.90
Γ
Mag.
0.335
0.332
0.332
0.338
0.345
0.352
0.373
0.4
0.467
0.542
0.617
0.68
0.724
0.738
0.712
opt
DS
dB
22.59
19.49
18.68
15.42
14.21
13.70
11.50
10.20
7.34
5.66
4.54
3.52
3.29
3.08
2.45
0.59
-0.26
-1.08
-1.66
-3.49
-5.16
-5.30
-6.29
= 4V, I
Γ
Ang.
0.5
27.9
34.3
63.8
79.6
89.3
111.3
130
158.9
178.7
-167.8
-158.1
-149.3
-138.9
-124.2
opt
DS
Mag.
13.48
9.43
8.59
5.90
5.13
4.84
3.76
3.24
2.33
1.92
1.69
1.50
1.46
1.43
1.33
1.07
0.97
0.88
0.83
0.67
0.55
0.54
0.49
S
= 40 mA
21
R
0.07
0.06
0.06
0.05
0.05
0.05
0.05
0.04
0.03
0.03
0.02
0.04
0.06
0.1
0.18
n/50
DS
52.63
40.90
28.00
13.40
5.20
-6.37
-20.00
-34.50
-40.00
-52.10
-61.60
-70.50
-78.00
-84.20
-88.30
= 4V, I
Ang.
128.80
113.60
106.60
94.13
88.40
85.10
77.87
71.53
G
dB
21.8
18.83
18.59
16.22
15.46
14.61
13.34
12.29
10.47
8.96
8.05
7.19
6.41
6.15
5.07
DS
a
= 40 mA
dB
-27.54
-25.51
-24.73
-22.97
-22.05
-21.51
-20.26
-18.20
-17.46
-16.95
-16.42
-15.65
-15.29
-15.29
-15.04
-15.04
-14.56
-15.09
-15.55
-15.81
-18.64
-17.72
-17.86
S
Mag.
0.042
0.053
0.058
0.071
0.079
0.084
0.097
0.123
0.134
0.142
0.151
0.165
0.172
0.172
0.177
0.177
0.187
0.176
0.167
0.162
0.117
0.130
0.128
12
Ang.
54.00
47.30
45.20
42.93
42.23
41.93
41.33
40.47
30.50
25.67
18.43
8.40
4.07
-4.27
-15.27
-27.37
-31.00
-41.67
-49.77
-58.03
-64.67
-71.07
-75.90
Figure 21. MSG/MAG and |S
Frequency at 4V, 40 mA.
-10
40
30
20
10
0
0
MSG
Mag.
0.36
0.41
0.43
0.46
0.46
0.47
0.48
0.49
0.50
0.50
0.51
0.52
0.52
0.53
0.53
0.53
0.59
0.64
0.69
0.71
0.75
0.77
0.79
5
|S
FREQUENCY (GHz)
S
21
22
MAG
|
2
Ang.
-149.40
-162.57
-167.93
-177.83
177.53
174.77
168.10
164.80
140.63
137.60
120.43
113.63
112.80
97.33
82.40
69.40
63.63
52.57
43.13
33.47
27.23
20.77
15.87
10
21
15
|
MSG/MAG
dB
25.06
22.50
21.70
19.20
18.13
17.61
15.88
14.20
11.39
9.81
8.14
7.45
7.42
7.18
6.94
6.64
6.29
5.80
5.59
5.35
4.93
4.97
3.70
2
vs.
20