ATF-551M4-BLK Avago Technologies US Inc., ATF-551M4-BLK Datasheet - Page 3

• Manufacturer Part Number: ATF-551M4-BLK
• Description: IC PHEMT 2GHZ 2.7V 10MA MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-BLK

• Package / Case: 4-MiniPak (1412)
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.5dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 270 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Drain-gate Voltage (max): -5 to 1V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: MiniPak
• No. Of Pins: 4
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ATF-551M4 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Gain
OIP3
P1dB
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP, and IIP measurements. This circuit represents a trade-off
between an optimal noise match, maximum OIP match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
ATF-551M4 Electrical Specifications (see notes 2 and , as indicated)
Symbol
Fmin
Ga
OIP3
P1dB
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at

Input
A
= 25°C, RF parameters measured in a test circuit for a typical device
from 4 wafers.
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
Line Including
Transmission
(0.3 dB loss)
Gate Bias T
50Ω Input
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Gain
Output 3
Intercept Point
1dB Compressed
Output Power
Parameter and Test Condition
Minimum Noise Figure
Associated Gain
Output 3
Intercept Point
1dB Compressed
Output Power
[1]
rd
rd
Order
Order
[1]
[1]
[3]
[1]
[3]
[2]
Matching Circuit
[2]
Γ_mag = 0.3
Γ_ang = 11°
(0.3 dB loss)
f = 900 GHz
f = 900 GHz
f = 900 GHz
f = 900 GHz
Input
f = 3.9 GHz
f = 5.8 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 2 mA
Vds = 2.7V, Vgs = 0V
Vds = 2.7V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
Vgd = Vgs = -2.7V
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
DUT
Matching Circuit
Γ_mag = 0.3
(0.9 dB loss)
Γ_ang = 9°
Output
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
Min.
0.3
0.18
—
110
—
—
—
15.5
—
22
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Line Including
Transmission
(0.3 dB loss)
50Ω Output
Gate Bias T
Typ.
0.47
0.37
0.1
220
—
0.5
0.5
17.5
18.0
24.1
30.0
14.6
16.0
Typ.
0.27
0.41
0.61
0.88
21.8
17.9
14.2
12.0
22.1
24.3
24.5
14.3
14.5
14.3
Output
Max.
0.65
0.53
3
285
95
0.9
—
18.5
—
—
—
—
—
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—