ATF-35143-TR2G Avago Technologies US Inc., ATF-35143-TR2G Datasheet - Page 16

• Manufacturer Part Number: ATF-35143-TR2G
• Description: IC PHEMT 1.9GHZ 15MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-35143-TR2G

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 18dB
• Voltage - Rated: 5.5V
• Current Rating: 80mA
• Noise Figure: 0.4dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 10dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Drain Current (max): 80mA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4 +Tab
• Package Type: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
This model can be used as a design tool. It has been tested
on MDS for various specifications. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
ATF-35143 Die Model
EQ UA T I O N Cd s = 0 . 0 1 * W /2 0 0
EQ UA T I ON B e t a = 0 .0 6 * W/ 2 0 0
EQ UA T I ON R d = 2 0 0 / W
EQ UA T I ON R s = . 5 * 2 0 0 / W
EQ UA T I ON C g s = 0 . 2 * W/ 2 0 0
E Q UA T I O N C g d = 0 . 0 4 * W/ 2 0 0
E Q U A TI O N L g= 0 . 0 3 * 2 0 0 /W
E Q U A TI O N L d= 0 . 0 3 * 2 0 0 /W
E Q U A TI O N L s = 0 . 0 1 * 2 0 0 /W
E Q U A TI O N R c = 5 0 0 * 2 0 0 /W
16
GATE_IN
M ode l s c al f ac t o rs (W =F E T w i d th i n mi c ro n s )
SOURCE
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
L=Lc
L=La
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
L
L
C
R=Rb
R=Rb
L=Lb
L=Lb
C=Ca
Gate model
LOSSYL
LOSSYL
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
*
STATZ MESFET MODEL
G
D
S
MODEL = FET
Parasitics
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
R=0.1 OH
R
W=400 µm
R=Rb
R=Rb
R=Rb
L=Lb
L=Lb
L=Lb
LOSSYL
*
LOSSYL
G
LOSSYL
Breakdown
C=Cb
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
NFETMESFET
L=La * .5
L=Ld
C
L
L
Noise
FNC=01e+6
R=.17
P=.65
C=.2
SOURCE
S
DRAIN_OUT
MODEL=FET
D
S