NE3514S02-T1D-A CEL, NE3514S02-T1D-A Datasheet - Page 3
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NE3514S02-T1D-A
Manufacturer Part Number
NE3514S02-T1D-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Specifications of NE3514S02-T1D-A
Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3514S02-T1D-A
Manufacturer:
RENESAS
Quantity:
12 400
TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
5
Gate to Source Voltage V
50
Ambient Temperature T
Frequency f (GHz)
10
Mounted on Glass Epoxy PCB
(1.08 cm
100
G
–1.0
a
15
2
NF
150
× 1.0 mm (t) )
min
20
A
A
GS
V
I
(˚C)
D
= +25°C, unless otherwise specified)
V
DS
200
(V)
= 10 mA
DS
25
= 2 V
= 2 V
Data Sheet PG10593EJ01V0DS
250
30
0
20
18
16
14
12
10
8
6
4
2
0
100
80
60
40
20
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage V
1.0
DS
NE3514S02
V
(V)
GS
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
3