ATF-38143-TR1G Avago Technologies US Inc., ATF-38143-TR1G Datasheet - Page 2

• Manufacturer Part Number: ATF-38143-TR1G
• Description: IC PHEMT 1.9GHZ 4.5V 10MA SOT343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-38143-TR1G

• Gain: 16dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 4.5V
• Current Rating: 145mA
• Noise Figure: 0.4dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 12dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 4.5V
• Power Dissipation Pd: 580mW
• Noise Figure Typ: 0.4dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 145mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
Distribution data sample size is 450 samples taken from 6 different
wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits. Measurements made
on production test board. This circuit represents a trade-off between
2
ATF-38143 Absolute Maximum Ratings
Product Consistency Distribution Charts
Figure 1. Typical I-V Curves. (V
250
200
150
100
180
150
120
50
Figure 3. NF @ 2 GHz, 2 V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85
90
60
30
Symbol
0
P
0
0.1
P
T
in max
0
V
T
V
V
I
θ
STG
DS
diss
GD
DS
GS
CH
jc
0.2
1
-3 Std
0.3
0.4 0.5
2
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
V
NF (dB)
DS
(V)
GS
+3 Std
3
= -0.2 V per step)
0.6
+0.6 V
–0.6 V
0 V
0.7 0.8
4
0.9
5
[3]
Cpk = 4.08938
Stdev = 0.03 dB
6 Wafers
Sample Size = 450
[2]
[2]
[1]
°C/W
Units
dBm
mW
mA
°C
°C
V
V
V
300
250
200
150
100
160
120
Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
LSL=18.5, Nominal=21.99, USL=26.0
Figure 4. Gain @ 2 GHz, 2 V, 10 mA.
LSL=15.0, Nominal=16.06, USL= 18.0
50
80
40
0
0
18
15
an optimal noise match and a realizeable match based on production
test requirements. Circuit losses have been de-embedded from actual
measurements.
15.5
-3 Std
-3 Std
-65 to 160
Maximum
Absolute
20
580
160
165
4.5
I
17
-4
-4
dss
16
GAIN (dB)
OIP3 (dB)
+3 Std
16.5
22
17
+3 Std
24
Notes:
1. Operation of this device above any one of
2. Source lead temperature is 25°C. Derate
3. Thermal resistance measured using 150°C
17.5
these parameters may cause permanent
damage.
6 mW/°C for T
Liquid Crystal Measurement method.
26
18
Cpk = 2.58097
Stdev = 0.14 dB
6 Wafers
Sample Size = 450
Cpk = 1.59062
Stdev = 0.73 dBm
6 Wafers
Sample Size = 450
L
> 64°C.