NE3508M04-T2-A CEL, NE3508M04-T2-A Datasheet - Page 2

• Manufacturer Part Number: NE3508M04-T2-A
• Description: AMP HJ-FET 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3508M04-T2-A

• Transistor Type: HFET
• Frequency: 2GHz
• Gain: 14dB
• Voltage - Rated: 4V
• Current Rating: 120mA
• Noise Figure: 0.45dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 18dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Polarity: N-Channel
• Power Dissipation: 125 mW
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Forward Transconductance Gfs (max / Min): 55 mS
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Gain 1 dB Compression
Output Power
Parameter
Parameter
Symbol
Symbol
P
V
I
O (1 dB)
V
I
GS (off)
NF
P
GSO
G
DSS
g
I
DS
D
m
in
a
A
V
V
V
V
V
V
f = 2 GHz
Data Sheet PG10586EJ01V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
DS
MIN.
−
−
−
= −3 V
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= 3 V, I
D
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 2 GHz
= 30 mA (Non-RF),
10
2
−
= +25°C)
= 0 V
µ
A
MAX.
30
3
0
dBm
Unit
mA
V
−0.25
MIN.
100
60
12
−
−
−
TYP.
−0.5
0.45
90
14
18
1
−
MAX.
−0.75
120
0.7
NE3508M04
20
−
−
−
dBm
Unit
mA
mS
µ
dB
dB
V
A