MRFG35010ANR5 Freescale Semiconductor, MRFG35010ANR5 Datasheet - Page 5

• Manufacturer Part Number: MRFG35010ANR5
• Description: TRANS RF 10W 12V PWR FET NI360HF
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35010ANR5

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 15V
• Current Rating: 2.9A
• Current - Test: 140mA
• Voltage - Test: 12V
• Power - Output: 10W
• Package / Case: NI-360HF
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• Other names: MRFG35010ANR5TR

RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
−10
−20
−30
−40
−50
−60
14
12
10
8
6
4
2
10
15
Figure 3. Single - Carrier W - CDMA Power Gain
Figure 4. Single - Carrier W - CDMA ACPR and
V
Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
Γ
Γ
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
DS
S
L
and Drain Efficiency versus Output Power
DS
S
= 0.827 ∠ −157.6_
Input Return Loss versus Output Power
= 0.850 ∠ −138.7_
= 0.850 ∠ −138.7_, Γ
= 12 Vdc, I
= 12 Vdc, I
15
TYPICAL CHARACTERISTICS
20
η
D
ACPR
DQ
DQ
P
P
IRL
out
out
= 140 mA, f = 3550 MHz
= 140 mA, f = 3550 MHz
20
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
25
L
= 0.827 ∠ −157.6_
25
S
30
and Γ
30
L
are the impedances presented to the DUT.
35
35
G
T
40
40
60
50
40
30
20
10
0
0
−5
−10
−15
−20
−25
MRFG35010AR1
5