CRF24060FE Cree Inc, CRF24060FE Datasheet - Page 2

• Manufacturer Part Number: CRF24060FE
• Description: 10W RF SIC MESFET FLANGED 440193
• Manufacturer: Cree Inc

Specifications of CRF24060FE

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: MESFET
• Frequency: 1.1GHz
• Gain: 13dB
• Voltage - Rated: 120V
• Current Rating: 9A
• Current - Test: 2A
• Voltage - Test: 48V
• Power - Output: 60W
• Package / Case: 440193
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CRF24060F; CRF24060F

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Electrical Characteristics (T
Notes:
1
2
3
Copyright © 2002-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc.
Parameter
Drain-source Voltage
Gate to source Voltage
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Screw Torque
Soldering Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance
Case Operating Temperature
RF Characteristics
Gain
Power Output at 1 dB Compression
Power Output at 3 dB Compression
Drain Efficiency
Intermodulation Distortion
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain Efficiency = P
Power Added Efficiency (PAE) = (P
Measured on wafer prior to packaging.
2
CRF24060F Rev 2.0
1,2
3
OUT
/ P
DC
OUT
Symbol
V
VSWR
V
V
IMD
(BR)DSS
P
P
I
G
C
C
C
- P
GS(th)
GS(Q)
g
T
DSS
1dB
3dB
η
GD
SS
DS
GS
m
C
3
IN
C
) / P
= 25˚C)
DC
Symbol
V
10 : 1
T
V
R
Min.
T
T
100
700
T
-13
-30
DSS
STG
6.0
θJC
GS
10
50
40
S
J
–
–
–
–
–
-
Typ.
800
-10
-31
7.5
5.0
2.8
-7
13
60
80
45
15
–
–
–
Max.
125
9.0
–
–
–
–
–
–
–
–
–
–
–
–
–
-55, +150
-20, +3
Rating
120
255
225
1.4
80
Units
VDC
VDC
VDC
dBc
mS
˚C
dB
%
pF
pF
pF
W
W
Y
A
Conditions
V
V
V
V
V
V
f = 1100 MHz
V
f = 1100 MHz
V
f = 1100 MHz
V
f = 1100 MHz P
V
f
P
No damage at all phase angles,
V
f = 1000 MHz, P
V
V
V
1
OUT
DS
DS
DS
GS
DS
DD
DD
DD
DD
DD
DD
DS
DS
DS
= 1000 MHz, f
= 10 V, I
= 48 V, I
= 10 V, V
= -18, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, V
= 48 V, V
= 48 V, V
= 50W PEP
D
D
D
D
DQ
DQ
DQ
DQ
DQ
DQ
GS
gs
gs
gs
= 50 mA
= 2.5 mA
= 2000 mA
= 2000 mA
= -16 V, f = 1 MHz
= -16 V, f = 1 MHz
= -16 V, f = 1 MHz
= 2000 mA,
= 2000 mA,
= 2000 mA,
= 2000 mA,
= 2000 mA,
= 2000 mA,
= 0 V
OUT
OUT
2
= 1000.1 MHz,
= P
USA Tel: [phone]
= 50W CW
Units
˚C/W
in-oz
Volts
Volts
www.cree.com/wireless
˚C
˚C
˚C
1dB
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.