MRF6VP3450HR5 Freescale Semiconductor, MRF6VP3450HR5 Datasheet - Page 11

• Manufacturer Part Number: MRF6VP3450HR5
• Description: MOSFET RF N-CH 50V NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP3450HR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 860MHz
• Gain: 22.5dB
• Voltage - Rated: 110V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 50V
• Power - Output: 90W
• Package / Case: NI-1230
• Drain Source Voltage Vds: 110V
• Rf Transistor Case: NI-1230
• Termination Type: SMD
• Output Power Pout: 90W
• Peak Reflow Compatible (260 C): Yes
• Transistor Polarity: N Channel
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Gate-source Voltage: 10V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 860MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: MRF6VP3450HR5TR

RF Device Data
Freescale Semiconductor
Figure 22. Single- -Carrier DVB- -T OFDM Power Gain, Drain Efficiency
24
23
22
21
20
19
18
17
16
10
10
10
10
10
10
470 500 530 560 590 620 650 680 710 740 770 800 830
TYPICAL CHARACTERISTICS — 470- -860 MHz
9
8
7
6
5
4
90
V
P
64 QAM Data Carrier Modulation, 5 Symbols
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 23. MTTF versus Junction Temperature
DD
out
and IRL versus Frequency — 470- -860 MHz
= 50 Vdc, I
= 90 W Avg., 8K Mode OFDM
110
TYPICAL CHARACTERISTICS
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
DQ
130
T
DD
J
= 1400 mA
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
f, FREQUENCY (MHz)
150
out
η
170
D
= 90 W Avg., and η
G
ps
190
210
IRL
D
= 28%.
230
860
250
36
34
32
30
28
26
24
22
20
0
--2
--6
--4
--8
11