J310G ON Semiconductor, J310G Datasheet - Page 2

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J310G

Manufacturer Part Number
J310G
Description
JFET VHF/UHF N-CH 25V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of J310G

Transistor Type
N-Channel JFET
Frequency
100MHz
Gain
16dB
Voltage - Rated
25V
Current Rating
60mA
Current - Test
10mA
Voltage - Test
10V
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
25 V
Drain Current (idss At Vgs=0)
24 mA to 60 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Breakdown Voltage Vbr
-25V
Gate-source Cutoff Voltage Vgs(off) Max
-6.5V
Power Dissipation Pd
350mW
Operating Temperature Range
-65°C To +125°C
No. Of Pins
3
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
J310GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
J310G
Manufacturer:
ON Semiconductor
Quantity:
1 150
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
Gate −Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Zero −Gate −Voltage Drain Current
Gate−Source Forward Voltage
Common−Source Input Conductance
Common−Source Output Conductance
Common−Gate Power Gain
Common−Source Forward Transconductance
Common−Gate Input Conductance
Common−Source Forward Transconductance
Common−Source Output Conductance
Common−Gate Forward Transconductance
Common−Gate Output Conductance
Gate−Drain Capacitance
Gate−Source Capacitance
Equivalent Short−Circuit Input Noise Voltage
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= −1.0 mAdc, V
= 10 Vdc, I
= 10 Vdc, V
= 0, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 0, V
= 0, V
= 10 Vdc, I
= −15 Vdc, V
= −15 Vdc, V
G
GS
GS
= 1.0 mAdc)
= −10 Vdc, f = 1.0 MHz)
= −10 Vdc, f = 1.0 MHz)
D
D
D
D
D
D
D
D
D
D
D
GS
DS
= 1.0 nAdc)
= 10 mAdc, f = 100 MHz)
= 10 mAdc, f = 100 MHz)
= 10 mAdc, f = 100 MHz)
= 10 mAdc, f = 100 MHz)
= 10 mAdc, f = 100 MHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 100 Hz)
DS
DS
Characteristic
= 0)
= 0)
= 0, T
= 0, T
(1)
A
A
= 25°C)
= +125°C)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
J309, J310
2
J309
J310
J309
J310
J309
J310
J309
J310
J309
J310
J309
J310
V
Symbol
V
Re(y
Re(y
Re(y
Re(y
(BR)GSS
V
I
GS(off)
I
G
C
C
GSS
DSS
g
g
GS(f)
g
g
e
os
og
gd
pg
fs
fg
gs
n
os
fs
ig
is
)
)
)
)
10000
8000
−1.0
−2.0
Min
−25
12
24
13000
12000
0.25
Typ
100
150
0.7
0.5
1.8
4.3
16
12
12
10
20000
18000
Max
−1.0
−1.0
−4.0
−6.5
250
1.0
2.5
5.0
30
60
mmhos
mmhos
mmhos
mmhos
nV
mmhos
mmhos
mmhos
mmhos
mAdc
nAdc
mAdc
Unit
Vdc
Vdc
Vdc
dB
pF
pF
Hz

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