MRF6V2010NBR5 Freescale Semiconductor, MRF6V2010NBR5 Datasheet - Page 6

• Manufacturer Part Number: MRF6V2010NBR5
• Description: MOSFET RF N-CH 50V TO-272-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2010NBR5

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 23.9dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 10W
• Package / Case: TO-272-2
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: - 5 V or 10 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 10W
• Power Gain (typ)@vds: 23.9dB
• Frequency (min): 10MHz
• Frequency (max): 450MHz
• Package Type: TO-272 EP
• Pin Count: 3
• Input Capacitance (typ)@vds: 16.3@50VpF
• Output Capacitance (typ)@vds: 7.3@50VpF
• Reverse Capacitance (typ): 0.13@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 62%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 110V
• Rf Transistor Case: TO-272
• Filter Terminals: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Gate-source Voltage: 10V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 220MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF6V2010NBR5TR

6
MRF6V2010NR1 MRF6V2010NBR1
26
24
22
20
18
16
14
12
10
27
26
25
24
23
22
21
20
19
0
0
G
G
ps
ps
Figure 12. Power Gain and Drain Efficiency
Figure 9. Power Gain versus Output Power
@ 220 MHz
@ 130 MHz
V
G
DD
ps
2
= 20 V
@ 450 MHz
2
P
η
P
versus CW Output Power
25 V
out
D
out
4
, OUTPUT POWER (WATTS) CW
@ 450 MHz
, OUTPUT POWER (WATTS) CW
4
30 V
G
ps
η
6
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
D
@ 64 MHz
35 V
@ 130 MHz
6
η
D
8
26
25
24
23
22
21
20
19
18
@ 220 MHz
η
V
I
40 V
DQ
0.1
D
DD
@ 64 MHz
= 30 mA
= 50 Vdc
8
85_C
10
T
C
= --30_C
45 V
TYPICAL CHARACTERISTICS
I
f = 220 MHz
DQ
10
= 30 mA
12
P
25_C
out
50 V
, OUTPUT POWER (WATTS) CW
14
12
80
70
60
50
40
30
20
10
0
1
G
η
ps
D
V
I
f = 220 MHz
DQ
DD
10
10
10
10
= 30 mA
= 50 Vdc
45
40
35
30
25
20
8
7
6
5
90
0
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
--30_C
Figure 10. Power Output versus Power Input
110
10
5
130
T
DD
J
25_C
, JUNCTION TEMPERATURE (°C)
85_C
= 50 Vdc, P
20
25_C
P
150
72
63
54
45
36
27
18
9
0
in
, INPUT POWER (dBm)
10
out
170
= 10 W CW, and η
Freescale Semiconductor
190
15
T
85_C
C
= --30_C
210
V
I
f = 220 MHz
RF Device Data
DQ
D
DD
= 62%.
= 30 mA
20
= 50 Vdc
230
250
25