CGH40010F Cree Inc, CGH40010F Datasheet - Page 4
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CGH40010F
Manufacturer Part Number
CGH40010F
Description
TRANS 10W RF GAN HEMT 440166 PKG
Manufacturer
Cree Inc
Datasheet
1.CGH40010F.pdf
(14 pages)
Specifications of CGH40010F
Mfg Application Notes
Thermal Performance Guide
Transistor Type
HEMT
Frequency
0Hz ~ 6GHz
Gain
14.5dB @ 3.7GHz
Voltage - Rated
84V
Current Rating
3.5A
Current - Test
200mA
Voltage - Test
28V
Power - Output
12.5W
Package / Case
440166
For Use With
CGH40010F-TB - BOARD DEMO AMP CIRCUIT CGH40010
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
CGH40010FE
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CGH40010F
Manufacturer:
CREE
Quantity:
521
Typical Performance
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
4
CGH40010 Rev 3.1
and Load Impedances Optimized for Drain Efficiency at 2.0 GHz
and Load Impedances Optimized for Drain Efficiency at 3.6 GHz
18
17
16
15
14
13
12
16
15
14
13
12
10
11
Swept CW Data of CGH40010F vs. Output Power with Source
Swept CW Data of CGH40010F vs. Output Power with Source
26
23
25
28
and Load Impedances Optimized for Drain Efficiency at 3.6 GHz
and Load Impedances Optimized for Drain Efficiency at 2.0 GHz
27
Swept CW Data of CGH40015F vs. Output Power with Source
Swept CW Data of CGH40015F vs. Output Power with Source
30
V
V
VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
29
DD
DD
32
= 28 V, I
= 28 V, I
31
Pout (dBm)
Pout (dBm)
34
33
DQ
DQ
= 200 mA
= 200 mA
36
35
37
38
39
40
41
42
43
80
70
60
50
40
30
20
10
0
80
72
64
56
48
40
32
24
16
8
0
USA Tel: +1.919.313.5300
www.cree.com/wireless
Fax: +1.919.869.2733
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.