ATF-54143-TR1G Avago Technologies US Inc., ATF-54143-TR1G Datasheet - Page 4

• Manufacturer Part Number: ATF-54143-TR1G
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-54143-TR1G

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 16.6dB
• Voltage - Rated: 5V
• Current Rating: 120mA
• Noise Figure: 0.5dB
• Current - Test: 60mA
• Voltage - Test: 3V
• Power - Output: 20.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 725 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 120 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 120mA
• Power Dissipation Pd: 725mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Termination Type: SMD
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Drain Current Idss Max: 5µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1572-2

ATF-54143 Typical Performance Curves
Notes:
1. I
2. Fmin values at 2 GHz and higher are based on
4
Figure 9. Gain vs. I
Max OIP3 and Fmin at 900 MHz.
Figure 6. Fmin vs. I
Max OIP3 and Fmin at 2 GHz.
Figure 12. P1dB vs. I
Max OIP3 and Fmin at 2 GHz.
0.7
0.6
0.5
0.4
0.3
0.2
25
24
23
22
21
20
19
18
24
22
20
18
16
14
12
without RF drive applied. Under low values of
I
increase substantially as P1dB is approached.
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
dq
ds
0
0
0
, the application of RF drive will cause I
represents the quiescent drain current
20
20
20
I
40
40
40
ds
dq
I
ds
I
ds
ds
dq
(mA)
and V
and V
(mA)
(mA)
and V
[1]
60
60
60
ds
ds
ds
Tuned for
Tuned for
Tuned for
80
80
80
3V
4V
3V
4V
3V
4V
100
100
100
d
to
Figure 7. Fmin vs. I
Max OIP3 and Min NF at 900 MHz.
Figure 13. P1dB vs. I
Max OIP3 and Fmin at 900 MHz.
Figure 10. OIP3 vs. I
Max OIP3 and Fmin at 2 GHz.
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
0.6
0.5
0.4
0.3
0.2
0.1
23
22
21
20
19
18
17
16
15
42
37
32
27
22
17
12
0
0
0
0
20
20
20
I
40
40
40
dq
I
ds
I
ds
ds
ds
dq
(mA)
and V
(mA)
(mA)
and V
and V
[1]
60
60
60
ds
ds
ds
Tuned for
Tuned for
Tuned for
80
80
80
3V
4V
3V
4V
3V
4V
100
100
100
Figure 8. Gain vs. I
Max OIP3 and Fmin at 2 GHz.
Figure 11. OIP3 vs. I
Max OIP3 and Fmin at 900 MHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
19
18
17
16
15
14
13
12
40
35
30
25
20
15
35
30
25
20
15
10
5
0
0
0
1
20
20
FREQUENCY (GHz)
2
40
40
ds
I
I
ds
ds
ds
and V
(mA)
(mA)
3
and V
60
60
ds
ds
4
Tuned for
Tuned for
80
80
25°C
-40°C
85°C
5
3V
4V
3V
4V
100
100
6