HSMP-3880-TR2G Avago Technologies US Inc., HSMP-3880-TR2G Datasheet - Page 3
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HSMP-3880-TR2G
Manufacturer Part Number
HSMP-3880-TR2G
Description
DIODE PIN SWITCH 100V SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HSMP-3880-TR1.pdf
(6 pages)
Specifications of HSMP-3880-TR2G
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
1A
Capacitance @ Vr, F
0.3pF @ 50V, 100MHz
Resistance @ If, F
3.8 Ohm @ 1mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
1 A
Frequency Range
UHF
Termination Style
SMD/SMT
Carrier Life
2.5 us
Forward Voltage Drop
1 V
Maximum Diode Capacitance
0.4 pF at 50 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
6.5 Ohms at 5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Recovery Time
550 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Parameters at T
Equivalent Circuit Model
HSMP-3880
I = Forward Bias Current in mA
R
C
R
T
T
1000
j
Figure 1. Forward Current vs.
Forward Voltage.
0.01
Figure 4. Typical Reverse Recovery
Time vs. Reverse Voltage.
900
800
700
600
500
400
300
200
100
=
100
= 1 + R
= C
0.1
2.0 nH
10
1
10
0
L
49
I
P
0.9
p
V
V
+ C
R
F
0.2
FORWARD CURRENT (mA)
Ω
j
– FORWARD CURRENT (mA)
= 5 V
125°C
j
15
0.4
V
1 Ω
R
R
V
25°C –55°C
= 10 V
s
R
0.6
20
= 20 V
0.08 pF
0.8
* Measured at -50 V
25
C
p
1.0
0.22 pF*
R
C
j
1.2
30
C
j
= 25°C (unless otherwise noted), Single Diode
1000
Figure 2. RF Resistance at 25°C vs.
Forward Bias Current.
Figure 5. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current.
120
115
110
105
100
100
0.1
95
90
85
10
0.01
1
1
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
I
I
F
F
– FORWARD BIAS CURRENT (mA)
– FORWARD BIAS CURRENT (mA)
0.1
1
10
10
100
30
3
Figure 3. Capacitance vs. Reverse
Voltage.
0.8
0.6
0.4
0.2
0
0
V
R
10
– REVERSE VOLTAGE (V)
20
30
40
50