HSMS-282M-BLKG Avago Technologies US Inc., HSMS-282M-BLKG Datasheet - Page 3

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HSMS-282M-BLKG

Manufacturer Part Number
HSMS-282M-BLKG
Description
DIODE SCHOTTKY RF QD 15V SOT-363
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMS-282M-BLKG

Diode Type
Schottky - 2 Pair Common Cathode
Voltage - Peak Reverse (max)
15V
Current - Max
1A
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Resistance @ If, F
12 Ohm @ 5mA, 1MHz
Package / Case
SC-70-6, SC-88, SOT-363
Diode Case Style
SOT-363
No. Of Pins
6
Pin Configuration
Common Cathode Quad
Termination Type
SMD
Breakdown Voltage Min
15V
Forward Voltage
340mV
Mounting Type
Surface Mount
Filter Terminals
SMD
Rohs Compliant
Yes
Capacitance
1pF
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
C
3
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C
The equivalent adjacent capacitance is the capacitance
C
between points A and C in the figure below. This capaci‑
tance is calculated using the following formula
This information does not apply to cross‑over quad di‑
odes.
C
C
DIAGONAL
DIAGONAL
ADJACENT
ADJACENT
R
R
j
j
C
C
=
=
= _______ + _______
= _______ + _______
= C
= C
1
2
C
C
C
C
8.33 X 10
8.33 X 10
1
1
1
1
1
1
x C
+ C
x C
+ C
+ ____________
+ ____________
I
I
b
b
+ I
+ I
2
2
2
2
–– + –– + ––
C
–– + –– + ––
C
1
1
s
s
2
2
C
-5
-5
C
3
C
C
C
C
4
nT
nT
1
1
C
C
3
3
3
1
3
1
x C
+ C
x C
+ C
3
3
1
C
1
C
4
4
4
4
4
4
A
B
Linear Equivalent Circuit Model Diode Chip
R
C
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
R
where
I
I
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
b
s
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
=
= junction capacitance (see Table of SPICE parameters)
= series resistance (see Table of SPICE parameters)
Parameter
8.33 X 10
C
B
E
I
P
R
P
M
N
I
BV
J0
S
G
V
S
B
T
R
I
S
b
+ I
s
-5
nT
Units
pF
eV
Ω
V
A
A
V
R
C
j
j
HSMS-282x
2.2E‑8
0.69
1E‑4
1.08
0.65
0.7
6.0
0.5
15
2

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