BAP50-05WT/R NXP Semiconductors, BAP50-05WT/R Datasheet - Page 2

• Manufacturer Part Number: BAP50-05WT/R
• Description: Diode PIN 50V 3-Pin SC-70 T/R
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05WT/R

• Package: 3SC-70
• Configuration: Dual Common Cathode
• Maximum Forward Current: 50 mA
• Maximum Forward Voltage: 1.1 V
• Maximum Reverse Voltage: 50 V
• Maximum Diode Capacitance: 0.5@5V pF
• Maximum Power Dissipation: 240 mW

NXP Semiconductors
FEATURES
 Two elements in common cathode configuration in a
 Low diode capacitance
 Low diode forward resistance.
APPLICATIONS
 General RF applications.
DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Apr 17
Per diode
V
I
P
T
T
SYMBOL
F
small-sized plastic SMD package
stg
j
R
tot
General purpose PIN diode
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
T
s
= 90 C
2
PINNING
handbook, halfpage
CONDITIONS
Marking code: W4-.
Fig.1 Simplified outline (SOT323) and symbol.
1
Top view
PIN
1
2
3
3
2
anode
anode
common cathode



65
65
MIN.
MAM382
1
Product specification
DESCRIPTION
BAP50-05W
50
50
240
+150
+150
MAX.
3
V
mA
mW
C
C
UNIT
2