DF10S Diodes Zetex, DF10S Datasheet
DF10S
Manufacturer Part Number
DF10S
Description
Diode Rectifier Bridge Single 1KV 1A 4-Pin Case DF-S
Manufacturer
Diodes Zetex
Datasheet
1.DF04S-T.pdf
(3 pages)
Specifications of DF10S
Package
4Case DF-S
Peak Average Forward Current
1@Ta=40C A
Peak Forward Voltage
1.1 V
Peak Reverse Current
10 uA
Peak Reverse Repetitive Voltage
1000 V
Bridge Type
Single Phase
Configuration
Single
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
1kV
Rms Voltage (max)
700V
Peak Non-repetitive Surge Current (max)
50A
Avg. Forward Curr (max)
1@Ta=40CA
Rev Curr
10uA
Forward Voltage
1.1V
Package Type
Case DFS
Operating Temp Range
-65C to 150C
Pin Count
4
Mounting
Surface Mount
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant
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Features
·
·
·
·
·
·
Mechanical Data
·
·
·
·
·
·
·
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DS17001 Rev. 13 - 2
Notes:
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
Forward Voltage (per element)
Peak Reverse Current at Rated
I
Typical Total Capacitance (per element) (Note 1)
Typical Thermal Resistance, Junction to Ambient
(Note 2)
Operating and Storage Temperature Range
DC Blocking Voltage (per element)
2
t Rating for Fusing (t<8.3ms)
Glass Passivated Die Construction
Low Forward Voltage Drop, High Current Capability
Surge Overload Rating to 50A Peak
Designed for Surface Mount Application
UL Listed Under Recognized Component Index, File
Number E94661
Lead Free Finish, RoHS Compliant (Date Code 0532+)
(Note 3)
Case: DF-S
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
Polarity: As marked on Case
Marking: Type Number, See Page 3
Weight: 0.38 grams (approximate)
1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7 .
e
3
Characteristic
@ T
@ T
@ T
@ I
A
A
A
F
= 25°C
= 125°C
= 40°C
= 1.0A
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
Symbol
T
V
V
V
j
R
I
, T
V
I
RWM
V
FSM
C
www.diodes.com
RMM
RMS
I
RM
I
qJA
FM
2
O
R
T
STG
t
1 of 3
J
005S
DF
50
35
H
K
2
L
01S
100
DF
70
(0.03mm thick) land areas.
@ T
A
= 25°C unless otherwise specified
02S
200
140
DF
A B
DF005S - DF10S
-65 to +150
10.4
04S
400
280
500
DF
1.0
1.1
50
10
25
40
C
G
D E
06S
600
420
DF
All Dimensions in mm
08S
Dim
800
560
DF
A
B
C
D
G
H
K
E
J
L
ã
DF005S-DF10S
RECTIFIER
Diodes Incorporated
0.076
DF-S
1000
7.40
6.20
0.22
1.02
8.13
2.40
5.00
1.00
Min
10S
700
DF
—
10.40
°C/W
Max
7.90
6.50
0.30
0.33
1.53
8.51
2.60
5.20
1.20
Unit
A
µA
pF
°C
V
V
A
A
V
2
s
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DF10S Summary of contents
Page 1
... 140 RMS = 40° FSM @ 25° 125° qJA STG 2 (0.03mm thick) land areas www.diodes.com DF005S - DF10S RECTIFIER DF-S Dim Min Max A 7.40 7. 6.20 6.50 C 0.22 0.30 D 0.076 0. — 10. 1.02 1.53 H 8.13 8. 2.40 2.60 K 5.00 5.20 L 1.00 1.20 All Dimensions in mm ...
Page 2
... Fig. 4 Typical Total Capacitance (per element) 100 T = 125° 1 25°C j 0.1 0. 100 80 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element www.diodes.com 0.8 1.0 1.2 1.4 0 25° 1.0 Mhz p-p sig 10 100 V , REVERSE VOLTAGE (V) R 120 140 DF005S-DF10S ...
Page 3
... Ordering Information (Note 4) Device* DFxS DFxS Device type, e.g. DF005S or DF10S, etc. Notes: 4. For Packaging Details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DFxxxS XXXX Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...