DF04S-E3/77 Vishay, DF04S-E3/77 Datasheet - Page 3
![Diode Rectifier Bridge Single 400V 1A 4-Pin Case DFS T/R](/photos/16/3/160391/dfs_sml.jpg)
DF04S-E3/77
Manufacturer Part Number
DF04S-E3/77
Description
Diode Rectifier Bridge Single 400V 1A 4-Pin Case DFS T/R
Manufacturer
Vishay
Datasheet
1.DF005S-E345.pdf
(4 pages)
Specifications of DF04S-E3/77
Package
4Case DFS
Peak Average Forward Current
1@Ta=40C A
Peak Forward Voltage
1.1 V
Peak Reverse Current
5 uA
Peak Reverse Repetitive Voltage
400 V
Bridge Type
Single Phase
Configuration
Single
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
4-SMD (DFS)
Product
Single Phase Bridge
Peak Reverse Voltage
400 V
Maximum Rms Reverse Voltage
280 V
Max Surge Current
50 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DF04S-E3/45
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF04S-E3/77
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88573
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
0.320 (8.13)
0.335 (8.51)
0.205 (5.2)
T
0.195 (5.0)
= 125 °C
J
0.8
40
= 50 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
Case Style DFS
1.0
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
DF005S thru DF10S
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3