MMBT2222AT-7-F Diodes Zetex, MMBT2222AT-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT2222AT-7-F
• Description: Trans GP BJT NPN 40V 0.6A 3-Pin SOT-523 T/R
• Manufacturer: Diodes Zetex
• Type: NPNr

Specifications of MMBT2222AT-7-F

• Package: 3SOT-523
• Supplier Package: SOT-523
• Pin Count: 3
• Minimum Dc Current Gain: 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V
• Maximum Operating Frequency: 300(Min) MHz
• Maximum Dc Collector Current: 0.6 A
• Maximum Base Emitter Saturation Voltage: 1.2@15mA@150mA|2@50mA@500mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@15mA@150mA|1@50mA@500mA V
• Maximum Collector Base Voltage: 75 V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30268 Rev. 10 - 2
200
100
250
150
50
5. Short duration pulse test used to minimize self-heating effect.
0
0
Characteristic
T , AMBIENT TEMPERATURE (°C)
A
40
Fig. 1 Power Derating Curve
80
120
@T
A
= 25°C unless otherwise specified
160
V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
h
CEX
I
h
h
h
f
BL
t
t
obo
t
t
FE
ibo
oe
T
d
ie
re
fe
s
200
r
f
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0.25
Min
100
300
6.0
0.6
2 of 4
75
40
35
50
75
40
75
25
⎯
⎯
⎯
⎯
⎯
—
⎯
⎯
⎯
⎯
⎯
1,000
Max
1.25
300
375
200
225
0.3
1.0
1.2
2.0
4.0
100
10
20
30
10
25
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
10
1
0.1
T = -25°C
A
X 10
MHz
Unit
kΩ
nA
nA
pF
pF
μS
⎯
⎯
ns
ns
ns
ns
V
V
V
V
V
Fig. 2 Typical DC Current Gain vs.
I , COLLECTOR CURRENT (mA)
C
-4
T = 125°C
1
A
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 100MHz
V
V
V
V
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
CE
CE
CB
EB
CE
CE
CE
CE
CE
CC
BE(off)
CC
= 10μA, I
= 150mA, I
= 10μA, I
= 10mA, I
= 100μA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 500mA, I
= 150mA, I
= 500mA, I
T = +25°C
Collector Current
= I
A
= 60V, V
= 60V, V
= 0.5V, f = 1.0MHz, I
= 10V, f = 1.0MHz, I
= 20V, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 30V, I
= 30V, I
B2
= - 0.5V, I
= 15mA
10
E
C
B
C
C
C
EB(OFF)
EB(OFF)
B
= 0
= 0
B
B
B
CE
= 0
= 20mA,
CE
CE
CE
= 150mA,
= 150mA,
CE
Test Condition
= 15mA
= 50mA
= 15mA
= 50mA
C
C
C
C
= 10V
= 10V
= 10V
= 10 mAdc, f = 1.0kHz
= 10 mAdc, f = 1.0kHz
= 10 mAdc, f = 1.0kHz
= 10 mAdc, f = 1.0kHz
B1
= 10V
= 10V
= 15mA
= 3.0V
= 3.0V
100
E
V
C
CE
= 0
= 0
= 1.0V
© Diodes Incorporated
MMBT2222AT
1,000