HSMS-270B-BLKG Avago Technologies US Inc., HSMS-270B-BLKG Datasheet - Page 7

• Manufacturer Part Number: HSMS-270B-BLKG
• Description: DIODE SCHOTTKY 15V 750MA SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMS-270B-BLKG

• Diode Type: Schottky - Single
• Package / Case: SC-70-3, SOT-323-3
• Voltage - Peak Reverse (max): 15V
• Current - Max: 750mA
• Capacitance @ Vr, F: 6.7pF @ 0V, 1MHz
• Power Dissipation (max): 825mW
• Diode Case Style: SOT-323
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Mounting Type: Surface Mount
• Current Rating: 750A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Resistance @ If, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Applications Information
Schottky Diode Fundamentals
The HSMS-270x series of clipping/clamping diodes
are Schottky devices. A Schottky device is a rectifying,
metal-semiconductor contact formed between a metal
and an n-doped or a p-doped semiconductor. When a
metal-semiconductor junction is formed, free electrons
flow across the junction from the semiconductor and fill
the free-energy states in the metal. This flow of electrons
creates a depletion or potential across the junction. The
difference in energy levels between semiconductor and
metal is called a Schottky barrier.
P-doped, Schottky-barrier diodes excel at applications
requiring ultra low turn-on voltage (such as zero-biased
RF detectors). But their very low, breakdown-voltage
and high series-resistance make them unsuitable for
the clipping and clamping applications involving high
forward currents and high reverse voltages. Therefore,
this discussion will focus entirely on n-doped Schottky
diodes.
Under a forward bias (metal connected to positive in an
n-doped Schottky), or forward voltage, V
electrons with enough thermal energy to cross the barrier
potential into the metal. Once the applied bias exceeds
the built-in potential of the junction, the forward current,
I
When the Schottky diode is reverse biased, the potential
barrier for electrons becomes large; hence, there is a
small probability that an electron will have sufficient
thermal energy to cross the junction. The reverse leakage
current will be in the nanoampere to microampere range,
depending upon the diode type, the reverse voltage, and
the temperature.
In contrast to a conventional p-n junction, current in
the Schottky diode is carried only by majority carriers
(electrons). Because no minority-carrier (hole) charge
storage effects are present, Schottky diodes have carrier
lifetimes of less than 100 ps. This extremely fast switching
time makes the Schottky diode an ideal rectifier at fre-
quencies of 50 GHz and higher.
Figure 6.
7
F
, will increase rapidly as V
CAPACITANCE
PN JUNCTION
BIAS VOLTAGE
–
P
N
+
0.6 V
CURRENT
CAPACITANCE
F
SCHOTTKY JUNCTION
increases.
BIAS VOLTAGE
–
METAL N
+
CURRENT
0.3V
F
, there are many
Another significant difference between Schottky and p-n
diodes is the forward voltage drop. Schottky diodes have
a threshold of typically 0.3 V in comparison to that of 0.6 V
in p-n junction diodes. See Figure 6.
Schottky contact and the choice of metal deposited on
the n-doped silicon, the important characteristics of the
diode (junction capacitance, C
R
can be optimized for specific applications. The HSMS-
270x series and HBAT-540x series of diodes are a case in
point.
Both diodes have similar barrier heights; and this is
indicated by corresponding values of saturation current,
I
thickness result in very different values of C
is seen by comparing their SPICE parameters in Table 1.
Table 1. HSMS-270x and HBAT-540x SPICE Parameters.
At low values of I
two diodes are nearly identical. However, as current rises
above 10 mA, the lower series resistance of the HSMS-
270x allows for a much lower forward voltage. This gives
the HSMS-270x a much higher current handling capabil-
ity. The trade-off is a higher value of junction capacitance.
The forward voltage and current plots illustrate the
differences in these two Schottky diodes, as shown in
Figure 7.
Figure 7. Forward Current vs. Forward Voltage at 25°C.
Through the careful manipulation of the diameter of the
S
Parameter
BV
CJ0
EG
IBV
IS
N
RS
PB
PT
M
S
. Yet, different contact diameters and epitaxial-layer
; breakdown voltage, V
300
100
.01
10
.1
1
0
V
0.1
F
– FORWARD VOLTAGE (V)
F
0.2
≤ 1 mA, the forward voltages of the
HSMS- 270x
25 V
6.7 pF
0.55 eV
10E-4 A
1.4E-7 A
1.04
0.65 Ω
0.6 V
2
0.5
HSMS-270x
0.3
BR
0.4
; and forward voltage, V
J
HBAT-540x
; parasitic series resistance,
0.5
0.6
HBAT- 540x
40 V
3.0 pF
0.55 eV
10E-4 A
1.0E-7 A
1.0
2.4 Ω
0.6 V
2
0.5
J
and R
S
. This
F
,)