BAP70-05,215 NXP Semiconductors, BAP70-05,215 Datasheet - Page 2

• Manufacturer Part Number: BAP70-05,215
• Description: DIODE PIN 50V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAP70-05,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 20V, 1MHz
• Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Carrier Life: 1.25 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.3 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.9 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 100 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1942-2; 934057581215; BAP70-05 T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP70-05_3
Product data sheet
Symbol
V
I
C
r
L
R
D
amb
L
S
F
d
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
I
V
see
see
when switched from I
I
I
I
F
R
R
F
R
= 50 mA
V
V
V
I
I
I
I
= 100 mA; f = 100 MHz
= 6 mA; R
= 3 mA
F
F
F
F
= 50 V
R
R
R
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
Rev. 03 — 5 April 2007
1; f = 1 MHz;
2; f = 100 MHz;
L
= 100 ; measured at
F
= 10 mA to
Conditions
continuous voltage
continuous current
T
sp
= 90 C
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
65
65
Typ
0.95
-
600
430
250
77
40
5.4
1.4
1.25
1.4
BAP70-05
Max
50
100
250
+150
+150
Typ
220
© NXP B.V. 2007. All rights reserved.
Silicon PIN diode
Max
1.1
100
-
-
300
100
50
7
1.9
-
-
Unit
V
mA
mW
Unit
K/W
C
C
Unit
V
nA
fF
fF
fF
nH
s
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