BAP1321LX,315 NXP Semiconductors, BAP1321LX,315 Datasheet - Page 2

• Manufacturer Part Number: BAP1321LX,315
• Description: DIODE PIN 60V 100MA SOD-882T
• Manufacturer: NXP Semiconductors

Specifications of BAP1321LX,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
• Resistance @ If, F: 1.3 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 130mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 0.48 us
• Forward Voltage Drop: 1.1 V @ 50 mA
• Maximum Diode Capacitance: 0.28 pF @ 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.3 Ohm @ 100 mA
• Maximum Series Resistance @ Minimum If: 5 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061245315; BAP1321LX T/R; BAP1321LX T/R

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP1321LX_1
Product data sheet
Symbol
V
I
C
r
ISL
R
D
amb
F
d
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
isolation
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP1321LX
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
I
V
see
see
see
F
R
= 50 mA
V
V
V
I
I
I
I
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
F
F
F
F
= 60 V
R
R
R
Figure
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
Rev. 01 — 30 July 2007
1; f = 1 MHz;
2; f = 100 MHz;
3; V
R
= 0 V;
Conditions
T
sp
= 90 C
Conditions
Marking code
LH
Min
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
65
65
BAP1321LX
Typ
0.95
-
0.32
0.27
0.21
3.3
2.4
1.2
0.9
17
12
10
Max
60
100
130
+150
+150
Typ
74
© NXP B.V. 2007. All rights reserved.
Silicon PIN diode
Max
1.1
100
-
0.38
0.28
5.0
3.6
1.8
1.3
-
-
-
Unit
V
mA
mW
Unit
K/W
C
C
Unit
V
nA
pF
pF
pF
dB
dB
dB
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