HSMS-286P-BLKG Avago Technologies US Inc., HSMS-286P-BLKG Datasheet

DIODE SCHOTTKY DETECT HF SOT-363

HSMS-286P-BLKG

Manufacturer Part Number
HSMS-286P-BLKG
Description
DIODE SCHOTTKY DETECT HF SOT-363
Manufacturer
Avago Technologies US Inc.
Datasheets

Specifications of HSMS-286P-BLKG

Diode Type
Schottky - 2 Pair Series Connection
Voltage - Peak Reverse (max)
4V
Capacitance @ Vr, F
0.25pF @ 0V, 1MHz
Package / Case
SC-70-6, SC-88, SOT-363
Capacitance Ct
0.25pF
Diode Case Style
SOT-363
Series Resistance @ If
6ohm
Peak Reflow Compatible (260 C)
Yes
Leaded Process Compatible
Yes
Forward Voltage
350mV
Capacitance, Junction
0.25 pF
Configuration
Bridge Quad
Package Type
SOT-363
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
150 °C/W
Speed, Switching
RF
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
350 mV
Voltage, Reverse
7 V
Breakdown Voltage
7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
516-1939
HSMS-286P-BLKG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HSMS-286P-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
HSMS-286P-BLKG
Quantity:
26
The HSMS-286F family of biased detector diodes have been designed and optimised for use
from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF,
RD@5mA=14Ohms, Vf @ 1 mA=350 mV
Products
HSMS-286P
High frequency detector diode
Description
Features
>
RF ICs/Discretes
>
Schottky Diodes
>
Surface Mount
Lifecycle status:
>
HSMS-286P
Active

Related parts for HSMS-286P-BLKG

HSMS-286P-BLKG Summary of contents

Page 1

... High frequency detector diode Description Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms mA=350 mV > ...

Page 2

... Unique Configurations in Surface Mount SOT‑363 Package – increase flexibility – save board space – reduce cost • HSMS‑286K Grounded Center Leads Provide Higher Isolation • Matched Diodes for Consistent Performance • Better Thermal Conductivity for Higher Power Dissipation • ...

Page 3

... T4 4 2865 T5 5 Test Conditions Notes: 1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA. 2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V. SOT-323/SOT-363 DC Electrical Specifications, T Part Package Number Marking Lead HSMS- Code Code 286B T0 B 286C T2 C 286E T3 E 286F T4 F 286K ...

Page 4

... RF Electrical Specifications +25°C, Single Diode C Part Typical Tangential Sensitivity Number TSS (dBm HSMS- 915 MHz 2.45 GHz 2860 – 57 –56 2862 2863 2864 2865 286B 286C 286E 286F 286K 286L 286P 286R Test Video Bandwidth = 2 MHz Conditions µA b Absolute Maximum Ratings +25° ...

Page 5

Diode Burnout Any Schottky junction diode or the gate of a MESFET, is relatively delicate and can be burned out with excessive RF power. Many crystal video receivers used in RFID (tag) applications find themselves in ...

Page 6

Package Dimensions Outline 23 (SOT-23 XXX SYMBOL Notes: e2 XXX-package marking E Drawings are not to scale L Outline 143 (SOT-143 ...

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