MMBD101LT1G ON Semiconductor, MMBD101LT1G Datasheet

DIODE SCHOTTKY 225MW 7V SOT23

MMBD101LT1G

Manufacturer Part Number
MMBD101LT1G
Description
DIODE SCHOTTKY 225MW 7V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBD101LT1G

Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
7V
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Power Dissipation (max)
225mW
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Schottky Diodes
Peak Reverse Voltage
7 V
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA @ 3 V
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
7V
Forward Current If(av)
10mA
Forward Voltage Vf Max
600mV
Diode Case Style
SOT-23
No. Of Pins
3
Current Rating
10A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBD101LT1GOS
MMBD101LT1GOS
MMBD101LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBD101LT1G
Manufacturer:
ON Semiconductor
Quantity:
61 866
Part Number:
MMBD101LT1G
Manufacturer:
ON Semiconductor
Quantity:
146
Part Number:
MMBD101LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBD101LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MBD101, MMBD101LT1
Schottky Barrier Diodes
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Reverse Voltage
Forward Power Dissipation
Derate above 25°C
Junction Temperature
Storage Temperature Range
Reverse Breakdown Voltage
Diode Capacitance
Forward Voltage
Reverse Leakage
Designed primarily for UHF mixer applications but suitable also for
Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance − Less Than 1.0 pF
High Forward Conductance − 0.5 V (Typ) @ I
Pb−Free Packages are Available
T
(I
(V
Note 1, page 2)
(I
(V
A
R
F
R
R
= 25°C
= 10 mA)
= 10 mA)
= 0, f = 1.0 MHz,
= 3.0 V)
Characteristic
Rating
MMBD101LT1
MMBD101LT1
MBD101
MBD101
Preferred Device
Symbol
Symbol
V
T
(BR)R
C
V
P
V
T
(T
I
stg
R
R
F
J
D
F
A
= 25°C unless otherwise noted)
Min
7.0
−55 to +150
F
Value
+150
0.88
0.02
Typ
280
225
0.5
7.0
2.2
1.8
10
= 10 mA
0.25
Max
1.0
0.6
1
mW/°C
Unit
Unit
mW
pF
mA
°C
°C
V
V
V
1
†For information on tape and reel specifications,
MBD101
MBD101G
MMBD101LT1
MMBD101LT1G
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
2
(Note: Microdot may be in either location)
2
CATHODE
CATHODE
SILICON SCHOTTKY
(Pin 2 Not Connected)
ORDERING INFORMATION
A
Y
WW = Work Week
4M = Device Code (SOT−23)
M
G
BARRIER DIODES
3
3
2
http://onsemi.com
SOT−23 (TO−236)
= Assembly Location
= Year
= Date Code*
= Pb−Free Package
TO−92 2−Lead
CASE 182
CASE 318
STYLE 1
STYLE 8
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
TO−92
TO−92
Publication Order Number:
ANODE
ANODE
1
1
3000 / Tape & Reel
3000 / Tape & Reel
5000 Units / Box
5000 Units / Box
1
Shipping
DIAGRAMS
MARKING
AYWW G
4M M G
MBD101/D
MBD
101
G
G

Related parts for MMBD101LT1G

MMBD101LT1G Summary of contents

Page 1

... MBD101G TO−92 5000 Units / Box (Pb−Free) MMBD101LT1 SOT−23 3000 / Tape & Reel MMBD101LT1G SOT−23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

0.2 0.1 0.07 0.05 0.02 0. AMBIENT TEMPERATURE (°C) A Figure 1. Reverse Leakage 1.0 0.9 0.8 0.7 0.6 0 1.0 2.0 V ...

Page 3

MBD101, MMBD101LT1 SEATING PLANE PACKAGE DIMENSIONS TO−92 TWO LEAD TO−226AC CASE 182−06 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

Related keywords